Quantum Modeling of the Carrier Mobility in FDSOI Devices

Abstract

We compute the electron and hole mobilities in ultrathin body and buried oxide, fully depleted silicon on insulator devices with various high-κ metal gate-stacks using nonequilibrium Green's functions (NEGF). We compare our results with experimental data at different back gate biases and temperatures. That way, we are able to deembed the different contributions to the carrier mobility in the films (phonons, front and back interface roughness, and remote Coulomb scattering). We discuss the role played by each mechanism in the front and back interface inversion regimes. We draw attention, in particular, to the clear enhancement of electron-and holephonons interactions in the films. These results show that FDSOI devices are a foremost tool to sort out the different scattering mechanisms in Si devices, and that NEGF can provide valuable inputs to technology computer aided design.

Impact of Electron–Phonon Scattering on Optical Properties of CH3NH3PbI3 Hybrid Perovskite Material

“…C EPS is a numerical fitting factor, which is adjusted to a value such that the model accounts for the correct value of the electron mobility. 32 The relation between C EPS and mobility is shown in Table 2. Electron mobility in hybrid perovskites has been experimentally measured from 1 to 100 cm 2 /(V s).…”

A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs

“…[33]. We use a diagonal hole-phonon interaction with one single acoustic deformation potential D ac = 16.5 eV and one single optical deformation potential DK opt = 15 eV/Å [34]. Details about the NEGF implementation can be found in Ref.…”

“…The total mobility µ can be reconstructed from the partial PH, SR and RCS mobilities with Matthiessen's rule. Since µ SR ∝ 1/∆ 2 SR [31], [32] and µ RCS ∝ 1/n RCS [39], [40], µ can be written for arbitrary ∆ SR and n RCS [34]:…”

Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism

“…However, the effective mass approximation in concomitance with scattering has been shown to reproduce experimental results. 38,39 Also, we previously demonstrated that for Si NWFETs, our own effective mass model reproduces the mobility of TB simulations. 30 The phonon limited mobility can be calculated using…”