Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On 2002
DOI: 10.1109/iit.2002.1258065
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Quantum mechanical model of electronic stopping power for ions in a free electron gas

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“…The electronic stopping power leads ions to lose kinetic energy caused by inelastic collisions between the electron of the medium and the ions. The nuclear stopping power is resulting from the elastic collision between ions and atoms [Amable et al, 2017;Yang et al, 2002]. In the example of implanting Bi into SiO 2 , Bi ion will penetrate the sample until this ion collides with a Si or O atom in the substrate.…”
Section: Ion Implantationmentioning
confidence: 99%
“…The electronic stopping power leads ions to lose kinetic energy caused by inelastic collisions between the electron of the medium and the ions. The nuclear stopping power is resulting from the elastic collision between ions and atoms [Amable et al, 2017;Yang et al, 2002]. In the example of implanting Bi into SiO 2 , Bi ion will penetrate the sample until this ion collides with a Si or O atom in the substrate.…”
Section: Ion Implantationmentioning
confidence: 99%