Quantum mechanical influence and estimated errors on interface-state density evaluation by quasi-static C–V measurement

Ōmura, Yasuhisa; Nakajima, Yasuyuki

doi:10.1016/s0038-1101(00)00071-x

Cited by 9 publications

(3 citation statements)

References 9 publications

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“…As the total capacitance of the gate is in seriary combination of three parts: silicon capacitance , oxide capacitance , and the capacitance due to the polysilicon depletion region , we get the total capacitance Since the induced positive charge in the polysilicon depletion region is equal to the space charge density in the silicon inversion region , but with an negative sign. , where is doping concentration in the poly-silicon region ( , but the is the sheet charge density of the polysilicon in the depletion region , so it will give us the correct dimension [7]. ⋅ cm q Now we are going to discuss the most complicated part , the channel capacitance.…”

Section: Comparison Between Modeling Simulation and Experiments Resultsmentioning

confidence: 99%

Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

Lee

Bosman

Green

et al. 2002

IEEE Trans. Electron Devices

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Section: Comparison Between Modeling Simulation and Experiments Resultsmentioning

confidence: 99%

Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

Lee

Bosman

Green

et al. 2002

IEEE Trans. Electron Devices

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“…The author already demonstrated that the capacitance model plays an important role in order obtaining a reliable value of D it . 15,16) This paper also addresses the feasibility of extracting the variation in dot size and/or dot location from measured C-V characteristics; this understanding is obviously useful in evaluating the quality of dot-based non-volatile memories. Section 4 concludes the study.…”

Section: Introductionmentioning

confidence: 99%

Impact of Dot-Size and Dot-Location Variations on Capacitance–Voltage Characteristics and Flat-Band Voltage Shift of Quantum-Dot Non-Volatile Memory Cells

Ōmura¹,

Horikawa²

2011

Jpn. J. Appl. Phys.

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This article performs three-dimensional simulations to analyze capacitance versus voltage (C–V) characteristics of metal–oxide–semiconductor (MOS) capacitors including nano-scale Si quantum dots inside the insulator. It is anticipated that performance of nonvolatile memory in use of Si quantum dots is strongly influenced by the dot-size variation, the dot-depth variation, and the dot-layout variation. Accordingly, the impacts of the variation in the physical parameters of Si quantum dots on C–V characteristics are simulated assuming symmetric and asymmetric distributions of the physical parameters. It is shown that the C–V characteristics of a MOS capacitor with Si quantum dots whose depths are somewhat distributed can be approximately estimated by assuming that the Si quantum dots are uniformly allocated with averaged depth. It is also revealed that the impact of the size variation of quantum dots on the C–V characteristics becomes more significant as the average size of the quantum dots increases. On the other hand, it is demonstrated that the C–V characteristics of a MOS capacitor having Si quantum dots with a certain size variation can be well reproduced by summing some typical capacitance components that are weighed with the quantum dot size distribution function. It is revealed that in-plane variation of quantum dot allocation yields a weak impact on the C–V characteristic. Quantum mechanical simulations suggest that reverse engineering can be applied to analysis of the variation of quantum dot size and depth.

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“…The impact is not negligible when the SiO 2 film is thinner than 5 nm. 39,40 Therefore, it was examined in practice how important quantum correction is when evaluating interface state density. 39,40 Thus, impedance analysis of the system is still meaningful if we are to characterize oxide films.…”

mentioning

confidence: 99%

Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

Ōmura¹

2021

ECS J. Solid State Sci. Technol.

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Based on the results of experiments on the resistive switching behaviors of sputter-deposited silicon oxide films, this paper proposes a possible equivalent circuit model to characterize the switching behavior. It is revealed that frequency dispersion of the conductance component and capacitance component in the equivalent circuit model dominate the physical interpretation of the frequency-dependence of the components. The validity of the model and its physical interpretation are examined based on a theoretical model of the dielectric function of the conductive filament region. The polarizability of the conductive filament region suggests that the capacitance component of the conductive filament is insensitive to frequency in the low frequency range, whereas the conductance component of the conductive filament is proportional to frequency in the low frequency range. These theoretical results match experimental findings, and it is revealed that the equivalent circuit models and the frequency dispersion models for the capacitance and conductance component of the silicon oxide film are acceptable. In addition, this paper reveals the importance of the sub-oxide region and the Si precipitate region in determining the resistive switching behaviors of sputter-deposited silicon oxide film.

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Quantum mechanical influence and estimated errors on interface-state density evaluation by quasi-static C–V measurement

Cited by 9 publications

References 9 publications

Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

Impact of Dot-Size and Dot-Location Variations on Capacitance–Voltage Characteristics and Flat-Band Voltage Shift of Quantum-Dot Non-Volatile Memory Cells

Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

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