2018
DOI: 10.1002/advs.201700978
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Quantum Magnetic Properties in Perovskite with Anderson Localized Artificial Spin‐1/2

Abstract: Quantum magnetic properties in a geometrically frustrated lattice of spin‐1/2 magnet, such as quantum spin liquid or solid and the associated spin fractionalization, are considered key in developing a new phase of matter. The feasibility of observing the quantum magnetic properties, usually found in geometrically frustrated lattice of spin‐1/2 magnet, in a perovskite material with controlled disorder is demonstrated. It is found that the controlled chemical disorder, due to the chemical substitution of Ru ions… Show more

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Cited by 6 publications
(18 citation statements)
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“…Metal-insulator transition in Ca(Co x Ru 1−x )O 3 : While the study of Ca(Ir x Ru 1−x )O 3 has provided valuable insight in understanding the novel metal-insulator transition phenomena in 113ruthenate perovskite, theoretical calculations hinted that substitution of Ru ion by isoelectronic Co-ion can lead to the formation of artificial spin-1/2 state in Ca(Co x Ru 1−x )O 3 . [25] Moreover, the non-stoichiometric composition of calcium ruthenate also manifest strong metal-insulator transition process, see Fig. 4.…”
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confidence: 95%
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“…Metal-insulator transition in Ca(Co x Ru 1−x )O 3 : While the study of Ca(Ir x Ru 1−x )O 3 has provided valuable insight in understanding the novel metal-insulator transition phenomena in 113ruthenate perovskite, theoretical calculations hinted that substitution of Ru ion by isoelectronic Co-ion can lead to the formation of artificial spin-1/2 state in Ca(Co x Ru 1−x )O 3 . [25] Moreover, the non-stoichiometric composition of calcium ruthenate also manifest strong metal-insulator transition process, see Fig. 4.…”
mentioning
confidence: 95%
“…[14,[19][20][21] Chemical substitution on Ca or Ru site is known to cause metal-insulator transition with complex magnetic properties, including spin glass and spin liquid phenomena. [11,[22][23][24][25][26] Here, we briefly discuss electrical, magnetic and spin-spin correlation properties in stoichiometric CaRuO 3 and some of the chemically doped versions.…”
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confidence: 99%
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“…Therefore, electrical conduction, in the temperature range of 18 K < T < 25 K, may be occurring due to the hopping of charge carriers. On the other hand, the positive value of MR is argued to be arising due to the thermally activated mechanism in magnetic systems [26]. However, this argument is not applicable to electrical resistance temperature dependence below T 18 K in the Nd thin film, as it does not manifest exponential rise as a function of (reducing) temperature.…”
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confidence: 98%
“…On the other hand, the positive value of MR is argued to be arising due to the thermally activated mechanism in magnetic systems. [24] However, this argument is not applicable to electrical resistance temperature dependence below T 18 K in Nd thin film, as it does not manifest exponential rise as a function of (reducing) temperature. Rather, resistance flattens at lower temperature.…”
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confidence: 99%