Quantum jamming transition to a correlated electron glass in 1T-TaS2

Gerasimenko, Yaroslav; Vaskivskyi, Igor; Litskevich, Maksim; Ravnik, Jan; Vodeb, Jaka; Diego, Michele; Kabanov, V. V.; Mihailović, D.

doi:10.1038/s41563-019-0423-3

Cited by 68 publications

(76 citation statements)

References 52 publications

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“…Recently, the configuration of a system of polarons in 1T-TaS 2 at very low temperatures has been investigated using the CLG model. Remarkably, this model describes well not only the equilibrium state [68] but also two different photoinduced states [49,55]. This success may be considered as justification for attempting to generalize the CLG model in order to understand the phase diagram and properties of polaron gases.…”

Section: Introductionmentioning

confidence: 76%

“…Intercalation also seems to cause the formation of more polarons, except for the 1T-Cu 0.08 TiSe 2 case. The role of fluence in photodoping has also not yet been fully explored, however the work of Stojchevska et al and Gerasimenko et al [1,55] suggests that larger fluences lead to more polarons being formed. We also note that the isovalent Se for S substitution in 1T-TaS 2−x Se x effectively introduces doping though strain induced by the size mismatch, but the end members [25].…”

Section: Discussionmentioning

confidence: 99%

“…(1) Figures 5(a), (e), (i) show 1T-TaS 2 in its pristine state ( = = / f f 1 13 m ), the lightly photoexcited 'hidden' state [1] and moderately photoexcited 'amorphous' state [55], respectively. The measured values of f are / 1 13, / 1 12.6 and / 1 11 respectively.…”

Section: Experimental Realizations Of Predicted Charge Ordersmentioning

confidence: 99%

“…The measured values of f are / 1 13, / 1 12.6 and / 1 11 respectively. For ¹ f f , m the density is determined by counting the polarons in the respective images using standard procedures described in [55]. In the amorphous state, f falls in between two magic numbers ( = / (3) Figures 5(a), (d) show Fe-doped 1T-Ta 1−x Fe x S 2 , which implies chemical doping.…”

Section: Experimental Realizations Of Predicted Charge Ordersmentioning

confidence: 99%

“…Such textures also seem to appear under various external perturbations such as photodoping [5,43], charge injection [2][3][4][5]49], non-isovalent [50] and isovalent [51,52] transition metal substitution, chemical doping by chalcogen ion substitution [53] or intercalation of transition metal ions [54]. Apart from DW textures, a few examples of amorphous states have been reported as a consequence of photodoping or charge injection [55] as well as alkali vapor deposition or N 2 H 4 intercalation [56][57][58] and possibly Nb intercalation [51]. Superconducting 2H-NbSe 2 exhibits a DW structure even in its pristine state with no lock-in transition to a CCDW as in other 2H compounds [59].…”

Section: Introductionmentioning

confidence: 99%

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Configurational electronic states in layered transition metal dichalcogenides

et al. 2019

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Mesoscopic irregularly ordered and even amorphous self-assembled electronic structures were recently reported in two-dimensional metallic dichalcogenides (TMDs), created and manipulated with short light pulses or by charge injection. Apart from promising new all-electronic memory devices, such states are of great fundamental importance, since such aperiodic states cannot be described in terms of conventional charge-density-wave (CDW) physics. In this paper, we address the problem of metastable mesoscopic configurational charge ordering in TMDs with a sparsely filled charged lattice gas model in which electrons are subject only to screened Coulomb repulsion. The model correctly predicts commensurate CDW states corresponding to different TMDs at magic filling fractions = / / / / / f 1 3, 1 4, 1 9, 1 13, 1 16.mDoping away from f m results either in multiple neardegenerate configurational states, or an amorphous state at the correct density observed by scanning tunnelling microscopy. Quantum fluctuations between degenerate states predict a quantum charge liquid at low temperatures, revealing a new generalized viewpoint on both regular, irregular and amorphous charge ordering in transition metal dichalcogenides.

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Section: Introductionmentioning

confidence: 76%

Section: Discussionmentioning

confidence: 99%

Section: Experimental Realizations Of Predicted Charge Ordersmentioning

confidence: 99%

Section: Experimental Realizations Of Predicted Charge Ordersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Configurational electronic states in layered transition metal dichalcogenides

et al. 2019

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Optical Control of Adaptive Nanoscale Domain Networks

Zajac,

Zhou,

Yang

et al. 2024

Advanced Materials

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Adaptive networks can sense and adjust to dynamic environments to optimize their performance. Understanding their nanoscale responses to external stimuli is essential for applications in nanodevices and neuromorphic computing. However, it is challenging to image such responses on the nanoscale with crystallographic sensitivity. Here, the evolution of nanodomain networks in (PbTiO3)n/(SrTiO3)n superlattices (SLs) is directly visualized in real space as the system adapts to ultrafast repetitive optical excitations that emulate controlled neural inputs. The adaptive response allows the system to explore a wealth of metastable states that are previously inaccessible. Their reconfiguration and competition are quantitatively measured by scanning x‐ray nanodiffraction as a function of the number of applied pulses, in which crystallographic characteristics are quantitatively assessed by assorted diffraction patterns using unsupervised machine‐learning methods. The corresponding domain boundaries and their connectivity are drastically altered by light, holding promise for light‐programable nanocircuits in analogy to neuroplasticity. Phase‐field simulations elucidate that the reconfiguration of the domain networks is a result of the interplay between photocarriers and transient lattice temperature. The demonstrated optical control scheme and the uncovered nanoscopic insights open opportunities for the remote control of adaptive nanoscale domain networks.

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Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS₂

Yang,

Lee,

Bang

et al. 2024

Advanced Science

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Vertical charge order shapes the electronic properties in layered charge density wave (CDW) materials. Various stacking orders inevitably create nanoscale domains with distinct electronic structures inaccessible to bulk probes. Here, the stacking characteristics of bulk 1T‐TaS2 are analyzed using scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. It is observed that Mott‐insulating domains undergo a transition to band‐insulating domains restoring vertical dimerization of the CDWs. Furthermore, STS measurements covering a wide terrace reveal two distinct band insulating domains differentiated by band edge broadening. These DFT calculations reveal that the Mott insulating layers preferably reside on the subsurface, forming broader band edges in the neighboring band insulating layers. Ultimately, buried Mott insulating layers believed to harbor the quantum spin liquid phase are identified. These results resolve persistent issues regarding vertical charge order in 1T‐TaS2, providing a new perspective for investigating emergent quantum phenomena in layered CDW materials.

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Quantum jamming transition to a correlated electron glass in 1T-TaS2

Cited by 68 publications

References 52 publications

Configurational electronic states in layered transition metal dichalcogenides

Configurational electronic states in layered transition metal dichalcogenides

Optical Control of Adaptive Nanoscale Domain Networks

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS₂

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Quantum jamming transition to a correlated electron glass in 1T-TaS2

Cited by 68 publications

References 52 publications

Configurational electronic states in layered transition metal dichalcogenides

Configurational electronic states in layered transition metal dichalcogenides

Optical Control of Adaptive Nanoscale Domain Networks

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS2

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Product

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Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS₂