2005
DOI: 10.1002/pssb.200461731
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Quantum islands formation and optical properties of CdZnTe/ZnTe quantum wells grown by atomic layer epitaxy

Abstract: PACS 78.55.Et, 78.67.De, 81.15.Hi In this work we report on optical properties of CdZnTe/ZnTe quantum wells (QWs) grown by atomic layer epitaxy (ALE) and the formation of quantum island during the QWs growth. The photoluminescence (PL) emission of QWs at lower temperature (250 °C) consists of two peaks. From studying the dependence of the PL integrated emission with the excitation intensity, it is found that theses both PL features have different nature. The high-energy sharp peak is associated to the excit… Show more

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“…A two-component shape of the QW PL band has also been observed in CdTe/ZnTe QW structures grown by MBE at high (350 −480 °C) temperatures or with applying long time healing after CdTe deposition [10], in CdTe/ZnTe quantum dot structures [11,12], in CdTe/CdZnTe QW structures or in Cd 1-x Zn x Te/ZnTe QWs grown by atomic layer epitaxy (ALE) at low temperatures (250−275 °C) [13]. In all these cases, formation of Cd-enriched nanoislands (quantum dots) inside the QW was supposed.…”
Section: Discussionmentioning
confidence: 91%
“…A two-component shape of the QW PL band has also been observed in CdTe/ZnTe QW structures grown by MBE at high (350 −480 °C) temperatures or with applying long time healing after CdTe deposition [10], in CdTe/ZnTe quantum dot structures [11,12], in CdTe/CdZnTe QW structures or in Cd 1-x Zn x Te/ZnTe QWs grown by atomic layer epitaxy (ALE) at low temperatures (250−275 °C) [13]. In all these cases, formation of Cd-enriched nanoislands (quantum dots) inside the QW was supposed.…”
Section: Discussionmentioning
confidence: 91%