Anisotropic negative magnetoresistance (MR) parallel and perpendicular to the wires in the regime of quantum interference of hole gas has been investigated in self-organized In 0.2 Ga 0.8 As quantum wires (QWRs) grown on GaAs (221)A substrates by MBE and separated from p-type Si-doped Al 0.35 Ga 0.75 As by an undoped spacer layer of it (thickness L s ) in order to address issues concerning the dimensionality in weak localization (WL) as well as spin-orbit (SO) interaction. For L s = 3 nm, the best fits of the parallel MR to the 2D WL theory have been obtained with τ so ~ 24 ps, being well described by the model of anisotropic 2D WL for strong lateral coupling of the wires. For L s = 20 nm, on the other hand, the best fits to 1D WL theory have been obtained with τ so ~ 150 ps assuming diffusive boundary scattering and the data cannot be fit to 2D WL, being well described by the model of quasi-1D WL. In addition, the data for L s = 10 nm show a featureof the crossover between 2D WL and 1D WL, indicating the intermediate lateral coupling between the wires.