Quantum Information Processing With Integrated Silicon Carbide Photonics

Majety, Sridhar; Saha, Pranta; Norman, Victoria; Radulaski, Marina

doi:10.48550/arxiv.2111.00136

Cited by 2 publications

(2 citation statements)

References 103 publications

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“…In recent years, silicon carbide has gained interest for quantum technology applications in fields like communication [1][2][3][4] and (bio)sensing. 5,6 It was found that color centers in SiC have favorable properties, such as long-lived spin states and possibilities for operation at telecom wavelengths.…”

Section: Introductionmentioning

confidence: 99%

Broadband single-mode planar waveguides in monolithic 4H-SiC

Bosma

Hendriks

Ghezellou

et al. 2022

Journal of Applied Physics

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Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing, and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years, many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides, and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, strain, and defects in the material, which greatly affects the homogeneity of the optical properties of color centers. Here, we present and test a method for fabricating monolithic single-crystal integrated-photonic devices in SiC: tuning optical properties via charge carrier concentration. We fabricated monolithic SiC n-i-n and p-i-n junctions where the intrinsic layer acts as waveguide core, and demonstrate the waveguide functionality for these samples. The propagation losses are below 14 dB/cm. These waveguide types allow for addressing color centers over a broad wavelength range with low strain-induced inhomogeneity of the optical-transition frequencies. Furthermore, we expect that our findings open the road to fabricating waveguides and devices based on p-i-n junctions, which will allow for integrated electrostatic and radio frequency control together with high-intensity optical control of defects in silicon carbide.

show abstract

Section: Introductionmentioning

confidence: 99%

Broadband single-mode planar waveguides in monolithic 4H-SiC

Bosma

Hendriks

Ghezellou

et al. 2022

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…In recent years silicon carbide has gained interest for quantum technology applications in fields like communication [1][2][3][4] and (bio)sensing 5,6 . It was found that color centers in SiC have favorable properties, such as long-lived spin states and possibilities for operation at telecom wavelengths [7][8][9] .…”

mentioning

confidence: 99%

Broadband single-mode planar waveguides in monolithic 4H-SiC

Bosma,

Hendriks,

Ghezellou

et al. 2022

Preprint

View full text Add to dashboard Cite

Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, strain and defects in the material, which greatly affects the homogeneity of the optical properties of color centers. Here we present and test a method for fabricating monolithic single-crystal integrated-photonic devices in SiC: tuning optical properties via charge carrier concentration. We fabricated monolithic SiC n-i-n and p-i-n junctions where the intrinsic layer acts as waveguide core, and demonstrate the waveguide functionality for these samples. The propagation losses are below 14 dB/cm. These waveguide types allow for addressing color-centers over a broad wavelength range with low strain-induced inhomogeneity of the optical-transition frequencies. Furthermore, we expect that our findings open the road to fabricating waveguides and devices based on p-i-n junctions, which will allow for integrated electrostatic and radio frequency (RF) control together with high-intensity optical control of defects in silicon carbide.

show abstract

Quantum Information Processing With Integrated Silicon Carbide Photonics

Cited by 2 publications

References 103 publications

Broadband single-mode planar waveguides in monolithic 4H-SiC

Broadband single-mode planar waveguides in monolithic 4H-SiC

Broadband single-mode planar waveguides in monolithic 4H-SiC

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