Quantum Hall effect based on Weyl orbits in Cd3As2

Zhang, Cheng; Zhang, Yi; Yuan, Xiang; Lu, Shiheng; Zhang, Jinglei; Narayan, Awadhesh; Liu, Yanwen; Zhang, Huiqin; Ni, Zhuoliang; Liu, Ran; Choi, Eun Sang; Suslov, Alexey; Sanvito, Stefano; Pi, Li; Lu, Hai‐Zhou; Potter, Andrew C.; Xiu, Faxian

doi:10.1038/s41586-018-0798-3

Cited by 234 publications

(164 citation statements)

References 41 publications

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“…D* used to demonstrate the ability of the device to detect minimum illumination signal . The formulas display as follows

I_{ph} = I_{light} - I_{dark}

R_{i} = \frac{I_{ph}}{p S}

EQE = \frac{I_{ph}}{e \emptyset} = \frac{h v}{e} \frac{I_{ph}}{p} = R_{i} \frac{h v}{e}

D^{*} = \frac{\sqrt{S} R_{i}}{\sqrt{2 e I_{dark}}}

where I light , I ph , I dark , p , ϕ, e , hν , and S 1 are device current under illumination, device dark current, device photocurrent, laser power density, photon flux, electron charge, photon energy, and device effective area, respectively …”

Section: Resultsmentioning

confidence: 99%

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Yang

Han

Liu

et al. 2020

Adv Funct Materials

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Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of great significance due to its wide range of applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi2Se3 is considered a promising candidate toward high‐performance IR applications. Nevertheless, the IR devices based on Bi2Se3 thin films are rarely reported. Here, a 3D TI Bi2Se3/MoO3 thin film heterojunction photodetector is shown that possesses ultrahigh responsivity (Ri), external quantum efficiency (EQE), and detectivity (D*) in the broadband spectrum (405–1550 nm). The highest on–off ratio of the optimized device can reach up to 5.32 × 104. Ri, D*, and the EQE can reach 1.6 × 104 A W−1, 5.79 × 1011 cm2 Hz1/2 W−1, and 4.9 × 104% (@ 405 nm), respectively. Surprisingly, the Ri can achieve 2.61 × 103 A W−1 at an optical communication wavelength (@ 1310 nm) with a fast response time (63 µs), which is two orders of magnitude faster than that of other TIs‐based devices. In addition, the device demonstrates brilliant long‐term (>100 days) environmental stability under environmental conditions without any protective measures. Excellent device photoelectric properties illustrate that the 3D TI/inorganic heterojunction is an appropriate way for manufacturing high‐performance photodetectors in the optical communication, military, and imaging fields.

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“…D* used to demonstrate the ability of the device to detect minimum illumination signal . The formulas display as follows

I_{ph} = I_{light} - I_{dark}

R_{i} = \frac{I_{ph}}{p S}

EQE = \frac{I_{ph}}{e \emptyset} = \frac{h v}{e} \frac{I_{ph}}{p} = R_{i} \frac{h v}{e}

D^{*} = \frac{\sqrt{S} R_{i}}{\sqrt{2 e I_{dark}}}

Section: Resultsmentioning

confidence: 99%

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Yang

Han

Liu

et al. 2020

Adv Funct Materials

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“…The marriage between magnetism and the topology of electronic structures in condensed matter systems provides fruitful ground for the exploration of exotic quantum phenomena [1][2][3]. Among them, the quantum anomalous Hall effect (QAHE), induced by spontaneous magnetization without an extrinsic magnetic field, have been sought for years because its dissipationless chiral edge state holds the potential to realize the next-generation electronic devices with ultralow power cost [4,5].…”

mentioning

confidence: 99%

Rational Design Principles of the Quantum Anomalous Hall Effect in Superlatticelike Magnetic Topological Insulators

et al. 2019

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As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle calculations, we establish a topological phase diagram and map on it with different two-dimensional configurations, which is taken from the recently-grown magnetic topological insulators MnBi4Te7 and MnBi6Te10 with superlattice-like stacking patterns. These configurations manifest various topological phases, including quantum spin Hall effect with and without time-reversal symmetry, as well as QAHE. We then provide design principles to trigger QAHE by tuning experimentally accessible knobs, such as slab thickness and magnetization. Our work reveals that superlattice-like magnetic topological insulators with tunable exchange interaction serve as an ideal platform to realize the long-sought QAHE in pristine compounds, paving a new avenue within the area of topological materials.

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“…Indeed, in a slab placed in a magnetic field perpendicular to the surfaces, current may flow in opposite directions along Fermi arcs on each surface, connected by chiral states through the bulk, to form closed loops 15 . These periodic orbits are expected to generate magneto-oscillations in measurable properties of a slab of WSM 16,17 . Notably, because the orbits involve a bulk component, the characteristic frequencies depend on the slab thickness.…”

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confidence: 99%

Surface states and arcless angles in twisted Weyl semimetals

Murthy

Fertig

Shimshoni

2020

Phys. Rev. Research

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Fermi arc states are features of Weyl semimetal (WSM) surfaces which are robust due to the topological character of the bulk band structure. We demonstrate that Fermi arcs may undergo profound restructurings when surfaces of different systems with a well-defined twist angle are tunnel-coupled. The twisted WSM interface supports a moiré pattern which may be approximated as a periodic system with large real-space unit cell. States bound to the interface emerge, with interesting consequences for the magneto-oscillations expected when a magnetic field is applied perpendicular to the system surfaces. As the twist angle passes through special "arcless angles", for which open Fermi arc states are absent at the interface, Fermi loops of states confined to the interface may break off, without connecting to bulk states of the WSM. We argue that such states have interesting resonance signatures in the optical conductivity of the system in a magnetic field perpendicular to the interface. arXiv:1909.08040v2 [cond-mat.mes-hall]

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Quantum Hall effect based on Weyl orbits in Cd3As2

Cited by 234 publications

References 41 publications

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Rational Design Principles of the Quantum Anomalous Hall Effect in Superlatticelike Magnetic Topological Insulators

Surface states and arcless angles in twisted Weyl semimetals

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Quantum Hall effect based on Weyl orbits in Cd3As2

Cited by 234 publications

References 41 publications

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Rational Design Principles of the Quantum Anomalous Hall Effect in Superlatticelike Magnetic Topological Insulators

Surface states and arcless angles in twisted Weyl semimetals

Contact Info

Product

Resources

About

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband