2011
DOI: 10.1038/nphys2008
|View full text |Cite
|
Sign up to set email alerts
|

Quantum Hall effect and Landau-level crossing of Dirac fermions in trilayer graphene

Abstract: The physics of Dirac fermions in condensed-matter systems has received extraordinary attention following the discoveries of two new types of quantum Hall effect in single-layer and bilayer graphene [1][2][3] . The electronic structure of trilayer graphene (TLG) has been predicted to consist of both massless single-layer-graphene-like and massive bilayer-graphene-like Dirac subbands [4][5][6][7] , which should result in new types of mesoscopic and quantum Hall phenomena. However, the low mobility exhibited by T… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

20
250
0
3

Year Published

2012
2012
2021
2021

Publication Types

Select...
7
2
1

Relationship

0
10

Authors

Journals

citations
Cited by 229 publications
(273 citation statements)
references
References 34 publications
20
250
0
3
Order By: Relevance
“…7,13,14,17,18,20,22 We measure the resistance R between different pairs of voltage probes in the temperature range of 1.5 K to 200 K while varying the top and bottom gate voltage V tg and V bg . Both four-terminal standard lock-in techniques and two-terminal DC techniques are used to measure the resistances as they vary by six orders of magnitude in different portion of the device.…”
mentioning
confidence: 99%
“…7,13,14,17,18,20,22 We measure the resistance R between different pairs of voltage probes in the temperature range of 1.5 K to 200 K while varying the top and bottom gate voltage V tg and V bg . Both four-terminal standard lock-in techniques and two-terminal DC techniques are used to measure the resistances as they vary by six orders of magnitude in different portion of the device.…”
mentioning
confidence: 99%
“…With the advent of high mobility samples that may be either suspended 29,30 or supported on BN substrates 31,32 , and advanced device geometry such as dual-gates or split top gates [33][34][35] , few-layer graphene provides QH systems with unusual symmetries and unprecedented tunability.…”
mentioning
confidence: 99%
“…[29] [73] ; 与 单层石墨烯不同, 具有 AB 堆垛的双层石墨烯在施加电 场的情况下可以打开高达 250 meV 的带隙 [74] , 使其应用 于逻辑器件成为可能; 三层石墨烯又会表现出新的量子 霍尔现象 [75] . 另外, 将石墨烯应用到透明导电薄膜领域 时, 单层石墨烯是不够的, 往往需要少层的石墨烯来获 得较低的面电阻 [13] .…”
Section: 在真空环境下 通过对各种掺碳单晶金属进行退 火 我们便能在各种单晶金属表面偏析生长石墨烯 如unclassified