Quantum Hall charge sensor for single-donor nuclear spin detection in silicon

Sleiter, D.; Kim, N. Y.; Nozawa, K.; Ladd, Thaddeus D.; Thewalt, M. L. W.; Yamamoto, Yoshihisa

doi:10.1088/1367-2630/12/9/093028

Cited by 10 publications

(7 citation statements)

References 33 publications

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“…Here, we demonstrate this all-electrical nuclear spin polarization scheme with phosphorus ( 31 P) donors in silicon field-effect transistors (FETs). We also investigate donor polarization in the integer quantum Hall regime, which is of considerable interest for realizing single spin readout [22], qubit coupling and quantum communication [23,24]. Our results show that careful tuning of the 2DEG density-of-states and bias fields can be used to controllably achieve hyper-(positive) and anti-(negative) polarization of donor nuclear spins.…”

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confidence: 97%

All-Electrical Nuclear Spin Polarization of Donors in Silicon

Weis

Tol

et al. 2013

Phys. Rev. Lett.

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We demonstrate an all-electrical donor nuclear spin polarization method in silicon by exploiting the tunable interaction of donor bound electrons with a two-dimensional electron gas, and achieve over two orders of magnitude nuclear hyperpolarization at T=5 K and B=12 T with an in-plane magnetic field. We also show an intricate dependence of nuclear polarization effects on the orientation of the magnetic field, and both hyperpolarization and antipolarization can be controllably achieved in the quantum Hall regime. Our results demonstrate that donor nuclear spin qubits can be initialized through local gate control of electrical currents without the need for optical excitation, enabling the implementation of nuclear spin qubit initialization in dense multiqubit arrays.

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confidence: 97%

All-Electrical Nuclear Spin Polarization of Donors in Silicon

Weis

Tol

et al. 2013

Phys. Rev. Lett.

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“…In many cases, substantial benefit arises from bringing together more than one of the hybridising schemes discussed in this article. For example, in NV − centres, one can combine three degrees of freedom: the optical electronic transition, the electron spin, and the nuclear spin of a nearby 13 C. Alternatively, a hybrid electrical and optical method for measuring single electron or nuclear spin states of P-donors in silicon has been demonstrated, which exploits the ability to selectively optically excite a bound exciton state of the P-donor and a nearby QPC (162).…”

Section: Discussionmentioning

confidence: 99%

Hybrid Solid-State Qubits: The Powerful Role of Electron Spins

Morton

Lovett

2011

Annu. Rev. Condens. Matter Phys.

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We review progress on the use of electron spins to store and process quantum information, with particular focus on the ability of the electron spin to interact with multiple quantum degrees of freedom. We examine the benefits of hybrid quantum bits (qubits) in the solid state that are based on coupling electron spins to nuclear spin, electron charge, optical photons, and superconducting qubits. These benefits include the coherent storage of qubits for times exceeding seconds, fast qubit manipulation, single qubit measurement, and scalable methods for entangling spatially separated matter-based qubits. In this way, the key strengths of different physical qubit implementations are brought together, laying the foundation for practical solid-state quantum technologies.

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“…13 Single nuclear spin readout with either optical 14 or a combined electrooptical techniques 15 has been proposed, but remains to be implemented. Here we explore the electrical readout of a single nuclear spin, more suitable for an indirect band-gap host like Si.…”

Section: 12mentioning

confidence: 99%

Probing a single nuclear spin in a silicon single electron transistor

2012

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We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin I = 9/2 affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of 100mK, dI/dV curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias. PACS: 73.23.Hk, 31.30.Gs, 74.55.+v, The amazing progress both in the silicon processing technologies and in the miniaturization of silicon based transistors has reached the point where singledopant transistors have been demonstrated.1-7 Whereas this progress has been fueled by the development of classical computing architectures, it might also be used for quantum computing. In this regard, the electronic and nuclear spins of single donors in silicon are very promising building blocks for quantum computing.8-10 Progress along this direction makes it necessary to implement single spin readout schemes both for electronic and nuclear spins. Single electronic spin readout has been demonstrated, both in GaAs quantum dots as well as in P doped Silicon Nanotransistors. 11,12The readout of the quantum state of a single nuclear spin, much more challenging, has been demonstrated for NV centers in diamond taking advantage of single spin optically detected magnetic resonance afforded by the extraordinary properties of that system. 13 Single nuclear spin readout with either optical 14 or a combined electrooptical techniques 15 has been proposed, but remains to be implemented. Here we explore the electrical readout of a single nuclear spin, more suitable for an indirect band-gap host like Si. A preliminary step is to construct a circuit whose transport is affected by the quantum state of the nuclear spin. There is ample experimental evidence of the mutual influence of many nuclear spins and transport electrons in III-V semiconductor quantum dots in the single electron transport regime. [16][17][18][19] In particular, Kobayashi et al. have reported hysteresis in the dI/dV upon application of magnetic fields, reflecting the realization of different ensemble of nuclear states coupled to the electronic spin via hyperfine coupling. 19Here we propose a device where a single nuclear spin is probed in single electron transport. We model the single electron transport in a silicon nanotransistor such that, in the active region, transport takes place through a single Bi dopant, see Fig. 1. We show that, at sufficiently low temperatures, the dI/dV curves of this device probe the hyperfine structure of the dopant level. In turn, the occupations of the nuclear spin states are affected by the transport electrons. Whereas single dopant transistors have been demonstrated for single P, As and B, in Si, 3,4,6,12 we choose Bi because it has a much larger hyperfine spl...

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Quantum Hall charge sensor for single-donor nuclear spin detection in silicon

Cited by 10 publications

References 33 publications

All-Electrical Nuclear Spin Polarization of Donors in Silicon

All-Electrical Nuclear Spin Polarization of Donors in Silicon

Hybrid Solid-State Qubits: The Powerful Role of Electron Spins

Probing a single nuclear spin in a silicon single electron transistor

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