We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.Dissipation in quantum systems has been an important area of research for many years. It has lately gained renewed attention as quantum systems have increasingly come to the forefront of technology, including research in nanotechnology and quantum information. In many of these contexts, dissipation can be modeled using a simple two-level system (TLS) or an ensemble of them. It is therefore generally useful to study dissipation in TLSs. For instance, in the context of quantum information [1], where any dissipation causes unwanted decoherence, TLSs are important in several different ways. First, the basic building block of all quantum bits is an effective TLS. In addition, the presence of parasitic TLSs in dielectrics has been shown to result in losses which degrade the quality factor of electrical resonators and limit the coherence of superconducting qubits [2]. Fast driving of a TLS through an avoided level crossings (ALC) recently received considerable attention, and has been analyzed in terms of Landau-Zener (LZ) transitions [3][4][5] and dressed states [6]. Recently, in a setup related to the one studied here, Sisyphus cooling [7] and amplification was observed in a superconducting circuit [8].In this Letter, we study a mesoscopic circuit consisting of a small metallic island connected by a tunnel junction to a much larger reservoir. Charging effects (Coulomb blockade) result in well defined energy levels which become degenerate at a specific bias point. An ac drive is used to cyclically drive the system through this level crossing. Due to the low transparency of the tunnel barrier, the coupling between the levels is negligible and the probability of a LZ transition when crossing the degeneracy point is very close to unity. However, due to the large degeneracy of the electronic states on the island, the total system can have a significant relaxation (or tunneling) rate. If the frequency of the drive is comparable to the relaxation rate of the system, alternating excitation and relaxation of the system lead to excess dissipation which can be directly measured. We call this process the Sisyphus resistance. We develop a quantitative model of the behavior that shows very good agreement with the measured response. * fredrik.persson@chalmers.se † per.delsing@chalmers.seThe charging effects which give rise to the quantization of the energy levels have a very peculiar effect on dissipation in the circuit. Far away from the degeneracy point, the Coulomb blockade prevents tunneling, and results in a high Sisyphus resistance and low dissipation. However, at the de...