Quantum electronic transport through three-dimensional microconstrictions with variable shapes

Scherbakov, A. G.; Bogachek, É. N.; Landman, Uzi

doi:10.1103/physrevb.53.4054

Cited by 95 publications

(77 citation statements)

References 33 publications

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“…The conductance of Au ASWs is related to a unit of G 0 , although the conductance deviates owing to irregularities in the wire shape, the convergent angle of electrodes, and the expansion of the interatomic distance. 19,[26][27][28] The geometry and roughness of the contact surfaces including electrodes also contribute to the conductance. 15 In conductance histograms of Pt and Ir NCs, peaks are not observed at quantized values, and the peaks are wider than those of Au NCs.…”

Section: Introductionmentioning

confidence: 99%

“…The formation process of ASWs during thinning of NCs has been investigated in relation to their quantized conductance defined by a quantum ͑G 0 =2e 2 / h, where e is the electron charge and h is Planck's constant͒. [16][17][18][19][20][21][22][23][24][25][26] The histograms of conductance values measured during the thinning process of NCs are produced to examine both the quantization of conductance and corresponding structures. In the conductance histograms of Au NCs, peaks are observed at integer multiples of G 0 .…”

Section: Introductionmentioning

confidence: 99%

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Atomic configuration, conductance, and tensile force of platinum wires of single-atom width

Kizuka

Monna

2009

Phys. Rev. B

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Platinum ͑Pt͒ wires of single-atom width were produced by the retraction of a Pt nanotip from contact with a Pt plate at room temperature inside a transmission electron microscope. The distance between the nanotip and the plate was controlled using a conductance feedback system, as a result of which wires showing certain conductance values were observed continuously by in situ lattice imaging. Simultaneously, the force acting on the wires was measured using a function of atomic force microscopy. The tip-plate distance was also increased with a constant speed, and the atomic configuration, force, and conductance were similarly investigated. The single-atom-width Pt wires were found to exhibit straight shapes with an interatomic distance of 0.28Ϯ 0.03 nm. The wires were stable at a tensile force of approximately 1 nN; the observed interatomic distance resulted from elastic expansion. The present study demonstrated experimental evidence for the relationship between wire length and conductance; the wires extend from a three-atom length to a five-atom length as the selected feedback conductance decreases from 2.0 to 0.5G 0 ͑where G 0 =2e 2 / h, e being the charge of an electron and h Planck's constant͒. Contacts exhibiting a conductance of 3.0G 0 were two-atom-width contacts. In a conductance histogram constructed from the simple retraction, only one peak was observed at 1.3G 0 . Thus, it was found that the conductance of single-atom-width Pt wires is less than 3.0G 0 , with 1.3G 0 being that of the most-stable state.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atomic configuration, conductance, and tensile force of platinum wires of single-atom width

Kizuka

Monna

2009

Phys. Rev. B

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“…In particular, in PbTe QWRs, the initial QW width determines the cross-section shape of the electron waveguide (see the right side of Fig. 7) which in turn governs the ratio between perpendicular and lateral quantization energies [13,28]. The latter depends on the etched QWR width and may be assumed as constant.…”

Section: Orbital Degeneracy Of 1d Levels In Pbte Nanostructuresmentioning

confidence: 99%

Ballistic Transport Phenomena in Nanostructures of Paraelectric Lead Telluride

Grabecki

2007

Acta Phys. Pol. A

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This is a review of our recent developments in the physics of lead telluride nanostructures. PbTe is a IV-VI narrow gap paraelectric semiconductor, characterized by the huge static dielectric constant ε > 1000 at helium temperatures. We nanostructurized this material by means of e-beam lithography and wet chemical etching of modulation doped PbTe/Pb 1−x Eu x Te quantum wells. Magnetoresistance measurements performed on the nanostructures revealed a number of magnetosize effects, confirming a ballistic motion of the carriers. The most important observation is that the conductance of narrow constrictions shows a precise zero-field quantization in 2e 2 /h units, despite a significant amount of charged defects in the vicinity of the conducting channel. This unusual result is a consequence of a strong suppression of the Coulomb potential fluctuations in PbTe, an effect confirmed by numerical simulations. Furthermore, the orbital degeneracy of electron waveguide modes can be controlled by the width of PbTe/Pb1−xEuxTe quantum wells, so that unusual sequences of plateau conductance can be observed. Finally, conductance measurements in a nonlinear regime allowed for an estimation of the energy spacing between the one-dimensional subbands.

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“…We combine the capacitances of the conduction channel to the two gates and describe the interaction of the quantum point contact with the gates with the help of a single geometrical capacitance C. A simple model of a quantum point contact takes the potential to be a saddle point at the center of the constriction [43,44],…”

Section: Charge Relaxation Resistance Of a Quantum Point Contactmentioning

confidence: 99%

Charge Relaxation Resistances and Charge Fluctuations in Mesoscopic Conductors

Büttiker¹

1999

J. Korean Phys. Soc.

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arXiv:cond-mat/9902054v1 [cond-mat.mes-hall] 3 Feb 1999Charge Relaxation Resistances and Charge Fluctuations in Mesoscopic Conductors M. BüttikerDepartment of Theoretical Physics, University of Geneva, Geneva, Switzerland (February 7, 2008) A brief overview is presented of recent work which investigates the time-dependent relaxation of charge and its spontaneous fluctuations on mesoscopic conductors in the proximity of gates. The leading terms of the low frequency conductance are determined by a capacitive or inductive emittance and a dissipative charge relaxation resistance. The charge relaxation resistance is determined by the ratio of the mean square dwell time of the carriers in the conductor and the square of the mean dwell time. The contribution of each scattering channel is proportional to half a resistance quantum. We discuss the charge relaxation resistance for mesoscopic capacitors, quantum point contacts, chaotic cavities, ballistic wires and for transport along edge channels in the quantized Hall regime. At equilibrium the charge relaxation resistance also determines via the fluctuation-dissipation theorem the spontaneous fluctuations of charge on the conductor. Of particular interest are the charge fluctuations in the presence of transport in a regime where the conductor exhibits shot noise. At low frequencies and voltages charge relaxation is determined by a nonequilibrium charge relaxation resistance.

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Quantum electronic transport through three-dimensional microconstrictions with variable shapes

Cited by 95 publications

References 33 publications

Atomic configuration, conductance, and tensile force of platinum wires of single-atom width

Atomic configuration, conductance, and tensile force of platinum wires of single-atom width

Ballistic Transport Phenomena in Nanostructures of Paraelectric Lead Telluride

Charge Relaxation Resistances and Charge Fluctuations in Mesoscopic Conductors

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