Quantum electrical transport of n-type and p-type AGNRs junctions

Masoudi, Maryam; Shokri, Aliasghar; Khezrabad, M.S. Akhoundi

doi:10.1016/j.physe.2020.114324

Cited by 8 publications

(2 citation statements)

References 32 publications

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“…The electronic states near the Fermi level play an important role in electronic transport properties . The more the number of flat bands near the Fermi level, the fewer electrons contribute to transport on the CNTs . These flat localized states indicate that electrons have high effective mass and low mobility and may not be able to enter the bias window at low voltage.…”

Section: Results and Discussionmentioning

confidence: 99%

Residual Molecular Groups’ Adsorption in Tuning the Transport Properties of Carbon Nanotubes

Cao

Zhang

2023

ACS Appl. Electron. Mater.

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Carbon nanotubes (CNTs) have attracted much attention due to their unique electronic structures and transport properties for the application of carbon-based sensor components. It is doubtful in experiments that if the adsorbates, such as the groups of conjugated polymers, hinder the performance of transport on CNTs. Here, we systemically studied the transport properties of common groups (−CH3, −C6H5, −NH2, −OH) adsorbed on (7, 0)-CNT by first-principles calculations. Our results show that the adsorption of surface groups will lead to different impurity states near the Fermi level. The localized electrons at the Fermi level limit the electrical transport properties of CNTs. The electron transport capacity of CNTs becomes weaker with increase in the impurity concentration and the carrier mobility becomes lower. Our research provides an instructive theoretical foundation for fabricating high-performance carbon-based sensor devices.

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Section: Results and Discussionmentioning

confidence: 99%

Residual Molecular Groups’ Adsorption in Tuning the Transport Properties of Carbon Nanotubes

Cao

Zhang

2023

ACS Appl. Electron. Mater.

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“…When exploring the electronic transport of the monolayer B-AsP, we first apply the material with the strains of -8%, -4%, 0%, +4%, and +5%. The electronic transport is mainly calculated by making the material into a model device and then using the NEGF method to calculate I-V curves [24,32,33]. The formula for calculating the I-V curves is…”

Section: Electron Transportmentioning

confidence: 99%

Strain-Modulated Electronic and Thermal Transport of Monolayer Black Arsenic Phosphorus

Yang²,

Jin³

2023

J. Phys.: Conf. Ser.

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In this paper, the first-principles density functional theory and non-equilibrium Green’s function method were used to investigate the effect of strain on the electronic and thermal transport of monolayer black arsenic phosphorus (B-AsP). Through this research, we found that the band gap of the monolayer B-AsP decreased under compressive strain, the electronic transport was revealed by I-V curves, and there was current at a very small voltage. The compressive strain can enhance the electronic transport, but it does not have a favorable effect on the thermal transport. When increasing the temperature at the same time for the tensile strain, the thermal transport has been improved, reflected by the ZT coefficient, which is increased by 7.76% compared with the original system. At the same time, we also used temperature to regulate the ZT coefficient. At a high temperature of 400 K, the ZT coefficient is larger than the one at room temperature by 26.11%.

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