Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Li, Jinmin

doi:10.7567/apex.6.052102

Cited by 42 publications

(29 citation statements)

References 19 publications

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“…That is, the linewidth locally recorded on one insertion is of a similar magnitude as the integral luminescence of planar QW structures [41,42]. Another observed feature is the emission at slightly higher energy than the main peaks visible in figures 6(d) and (f) between 2.5 and 2.8 eV.…”

Section: (Inga)n Luminescence Bandsupporting

confidence: 58%

“…However, the emission bands of individual NWs remain rather broad with an FWHM of 200-300 meV. In contrast, values for the FWHM on the order of 100-150 meV are reported from PL on planar (In,Ga)N QW structures emitting in the green spectral range [41,42]. These features call for a closer investigation of the (In,Ga)N luminescence of single NWs in CL spectral maps.…”

Section: (Inga)n Luminescence Bandmentioning

confidence: 93%

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Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy

Lähnemann¹,

Hauswald²,

Wölz³

et al. 2014

J. Phys. D: Appl. Phys.

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Abstract. (In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid-state light emitters. Such structures exhibit a notoriously broad emission band. We use cathodoluminescence spectral imaging in a scanning electron microscope and micro-photoluminescence spectroscopy on single nanowires to learn more about the mechanisms underlying this emission. We observe a shift of the emission energy along the stack of six insertions within single nanowires that may be explained by compositional pulling. Our results also corroborate reports that the localization of carriers at potential fluctuations within the insertions plays a crucial role for the luminescence of these nanowire based emitters. Furthermore, we resolve contributions from both structural and point defects in our measurements.

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Section: (Inga)n Luminescence Bandsupporting

confidence: 58%

Section: (Inga)n Luminescence Bandmentioning

confidence: 93%

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy

Lähnemann¹,

Hauswald²,

Wölz³

et al. 2014

J. Phys. D: Appl. Phys.

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show abstract

“…[9][10][11] For example, in FC-LEDs, heat can dissipate through the Si submount, and the light output power will not be influenced by this because of optical blocking by the highly reflective electrodes. [12][13][14] However, the poor LEE of FC-LEDs is still a bottleneck in their development. [15][16][17] Therefore, it is important to further enhance the LEE of FC-LEDs, which may be achieved through an optimized FC-LED structure design grown on NPSS.…”

Section: Introductionmentioning

confidence: 99%

Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer

Dongxue

Liu

et al. 2016

AIP Advances

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GaN-based flip-chip light-emitting diodes (FC-LEDs) grown on nanopatterned sapphire substrates (NPSS) are fabricated using self-assembled SiO2 nanospheres as masks during inductively coupled plasma etching. By controlling the pattern spacing, epitaxial GaN can be grown from the top or bottom of patterns to obtain two different GaN/substrate interfaces. The optoelectronic characteristics of FC-LED chips with different GaN/sapphire interfaces are studied. The FC-LED with an antireflective interface layer consisting of a NPSS with GaN in the pattern spacings demonstrates better optical properties than the FC-LED with an interface embedded with air voids. Our study indicates that the two types of FC-LEDs grown on NPSS show higher crystal quality and improved electrical and optical characteristics compared with those of FC-LEDs grown on conventional planar sapphire substrates.

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“…If taking the carrier localization into account as well, the effective volume of the active region will be introduced [15,16], and compared with the conventional ABC model, the corrected ABC model will exhibit better fitting to the experimental results. However, in these analytic processes, it has been assumed that carrier concentration in each quantum well is equal and did not consider different levels of the electron leakage in the samples.…”

Section: Introductionmentioning

confidence: 99%

Influence of electron distribution on efficiency droop for GaN-based light emitting diodes

Zhao

Zhang

et al. 2015

J Sol State Light

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By modulating the indium composition in the quantum barriers of InGaN-based LEDs, the influence of electron distribution, electron overflow and Auger recombination on the external quantum efficiency (EQE) and droop effect have been investigated. Experimental results as well as numerical simulations reveal that the electron distribution is the key factor to influence both the peak efficiency and droop effect. The results show that the high electron concentration in the individual quantum well can stimulate the Auger recombination and lead to the droop effect instead of the total effective electron concentration, which is more related to the external quantum efficiency. If we modulate the indium composition in the quantum barriers of the InGaN-based LEDs, a uniform electron distribution can be achieved, which can not only enhance the EQE but also avoid the Auger recombination and improve the droop effect.

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Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

Cited by 42 publications

References 19 publications

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy

Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer

Influence of electron distribution on efficiency droop for GaN-based light emitting diodes

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