Abstract:One of the challenging tasks of the century is to clean up the contaminants of the environment by ecofriendly, sustainable and economically adoptable technologies. The application of quantum dots (QDs) is growing rapidly in to the field of nanotechnology. The electronic properties such as the energy of the highest occupied molecular orbital (E HOMO), the lowest unoccupied molecular orbital (E LUMO), the energy gap ΔE are correlated to the size of quantum dots (QDs) such as CdSe in the presence of different lig… Show more
“…Density, width, and the center of the Gaussian peak of the host and dopants are necessary to form the Gaussian energy distribution in the EML and can greatly affect the resulting hopping mobility. Based on the results of research on the size and ligand effects on the DOS of CdSe nanocrystals, [57][58][59] we deduce that the QDs used in this study have a Gaussianlike peak in the CB with an energy of E CB = 2.2 eV and a Gaussian-like peak in the VB with an energy of E VB = 5.6 eV. On the other hand, the PVK HOMO and LUMO energy levels are measured [60] at E HOMO = 5.5 eV and E LUMO = 2.2 eV.…”
Section: Simulation Results and Discussionmentioning
We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes (QD-LEDs). We propose a model known as hopping mobility to calculate the carrier mobility in the emissive organic layer doped with quantum dots (QDs). To evaluate the ability of this model to describe the electrical characteristics of QD-LEDs, the measured data of a fabricated QD-LED with different concentrations of QDs in the emissive layer were taken, and the corresponding calculations were performed based on the proposed model. The simulation results indicate that the hopping mobility model can describe the concentration dependence of the electrical behavior of the device. Then, based on the continuity equation for singlet and triplet excitons, the exciton density profiles of the devices with different QD concentrations were extracted. Subsequently, the corresponding luminance characteristics of the devices were calculated, where the results are in good agreement with the experimental data.
“…Density, width, and the center of the Gaussian peak of the host and dopants are necessary to form the Gaussian energy distribution in the EML and can greatly affect the resulting hopping mobility. Based on the results of research on the size and ligand effects on the DOS of CdSe nanocrystals, [57][58][59] we deduce that the QDs used in this study have a Gaussianlike peak in the CB with an energy of E CB = 2.2 eV and a Gaussian-like peak in the VB with an energy of E VB = 5.6 eV. On the other hand, the PVK HOMO and LUMO energy levels are measured [60] at E HOMO = 5.5 eV and E LUMO = 2.2 eV.…”
Section: Simulation Results and Discussionmentioning
We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes (QD-LEDs). We propose a model known as hopping mobility to calculate the carrier mobility in the emissive organic layer doped with quantum dots (QDs). To evaluate the ability of this model to describe the electrical characteristics of QD-LEDs, the measured data of a fabricated QD-LED with different concentrations of QDs in the emissive layer were taken, and the corresponding calculations were performed based on the proposed model. The simulation results indicate that the hopping mobility model can describe the concentration dependence of the electrical behavior of the device. Then, based on the continuity equation for singlet and triplet excitons, the exciton density profiles of the devices with different QD concentrations were extracted. Subsequently, the corresponding luminance characteristics of the devices were calculated, where the results are in good agreement with the experimental data.
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