Quantum-dot Semiconductor disk-lasers

Germann,; Strittmatter, A.; Pohl,; Bimberg,; Rautiainen,; Guina, Mircea; Okhotnikov,

doi:10.1109/inow.2008.4634508

Cited by 5 publications

(8 citation statements)

References 7 publications

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“…As we have mentioned before, one potential benefit of employing QDs instead Guangcun SHAN, et al Vertical-external-cavity surface-emitting lasers and quantum dot lasers of quantum wells in a gain medium is the achievement of a low lasing threshold with much smaller temperature dependence. Moreover, by way of elastic strain relaxation in a uniform arrangement of 7×3 Stranski-Krastanow grown QD layers, GaAs QD laser devices for 1220 nm operation have been achieved to extend the operation wavelength to the near-IR range [72]. The device showed a threshold pump power of 0.48 W at 15°C for a high reflectivity (99.8%) output coupler mirror.…”

Section: Vecsels With Stranski-krastanow Qdsmentioning

confidence: 99%

“…As a practical alternative approach, the submonolayer QDs were implemented in semiconductor QD disk lasers for 940 nm [75] and 1040 nm emission [73]. The submonolayer QDs were grown by cycled depositions of pure binaries InAs and GaAs.…”

Section: Vecsels With Submonolayer Qdsmentioning

confidence: 99%

“…The use of RPG structures with a single-QD layer per antinode is another way to control strain in such lasers. Since 2008, several first realized QD gain chips that implemented a layout of RPG structure to selectively enhance gain at the operating wavelength have further been reported [13,[71][72][73][74].…”

Section: Vertical-external-cavity Surface-emitting Lasers Based On Qu...mentioning

confidence: 99%

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Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

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The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).

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Section: Vecsels With Stranski-krastanow Qdsmentioning

confidence: 99%

Section: Vecsels With Submonolayer Qdsmentioning

confidence: 99%

Section: Vertical-external-cavity Surface-emitting Lasers Based On Qu...mentioning

confidence: 99%

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Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

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“…For these reasons, it is important to suppress a defect generation and to maintain the crystal quality of QDs without WL formation to achieve high performance of devices. Recently, in attempts to fabricate defect-free QDs, InAs QDs with low defect density caused by strain, submonolayer (SML) deposition method has been suggested as an alternative method for the SK growth mode [8][9][10]. In principle, the SML growth process consists of InAs SML of thickness less than 1.0 monolayer (ML), while conventional InAs SK-QDs are typically formed by depositing over 1.7 ML (critical thickness in S-K mode) of InAs on the lattice-mismatched GaAs surface [9,11,12].…”

Section: Introductionmentioning

confidence: 99%

Excitation Intensity- and Temperature-Dependent Photoluminescence Study of InAs/GaAs Sub-monolayer-Quantum Dot

Kim

et al. 2018

Appl. Sci. Converg. Technol.

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Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity (I ex)-and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the I ex dependence show that the PL intensities increase with increasing I ex. The enhancement factors (k) of PL increment as a function of I ex are 3.3 and 1.22 at low and high I ex regime, respectively. The high k value at low I ex , implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.

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“…Lowcost, high-power lasers with excellent power scalability and outstanding beam quality [3][4][5][6][7] in a wide spectral range for continuous wave (CW) and short pulse emission [8,9] can be realized. SDLs are key elements for future applications such as low cost, full color video displays, and projection systems.…”

Section: Introductionmentioning

confidence: 99%