Advances in Optical and Photonic Devices 2010
DOI: 10.5772/7149
|View full text |Cite
|
Sign up to set email alerts
|

Quantum Dot Photonic Devices and Their Material Fabrications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2012
2012
2012
2012

Publication Types

Select...
1

Relationship

1
0

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 43 publications
(42 reference statements)
0
1
0
Order By: Relevance
“…From these experiment results, the T band is considered to be an attractive waveband with potential application to future photonic transport systems, assuming that ultra-broad optical frequency resources can be employed. It is also compatible with high-performance and green photonic devices such as high-power quantum dot lasers, GaAsbased and SiGe-based photonic devices, semiconductor optical amplifiers, ytterbium-doped fiber amplifiers (YDFAs), and group-IV semiconductor-based high-speed photonic receivers [9][10][11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 98%
“…From these experiment results, the T band is considered to be an attractive waveband with potential application to future photonic transport systems, assuming that ultra-broad optical frequency resources can be employed. It is also compatible with high-performance and green photonic devices such as high-power quantum dot lasers, GaAsbased and SiGe-based photonic devices, semiconductor optical amplifiers, ytterbium-doped fiber amplifiers (YDFAs), and group-IV semiconductor-based high-speed photonic receivers [9][10][11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 98%