Terahertz Emitters, Receivers, and Applications XI 2020
DOI: 10.1117/12.2567630
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Quantum dot photoconductive antenna-based compact setups for terahertz spectroscopy and imaging

Abstract: We present the overview of the results on the development of compact THz setups based on the quantum dot photoconductive antennas obtained during the past five years. We demonstrate the potential of the InAs/GaAs Quantum-Dot based setups to become an efficient approach to compact, room-temperature operating CW and pulsed terahertz setups for spectroscopy and imaging. We describe the photoelectronic processes in quantum dot substrates and reveal the role of quantum dots in free carrier lifetimes and the formati… Show more

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Cited by 3 publications
(4 citation statements)
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“…Until recently there has been little interest in photoexciting in this wavelength range. Unlike at other wavelengths, where the use and development of a PC material is driven by laser technology, here the discovery of PC emission from materials such as GaAs incorporating InAs quantum dots (QDs) has prompted a shift in excitation to longer wavelengths [55,56,[130][131][132][133]. The reason for this is to enable resonant excitation within the InAs QD structures.…”
Section: -1300 Nm Pumped Materialsmentioning
confidence: 99%
See 1 more Smart Citation
“…Until recently there has been little interest in photoexciting in this wavelength range. Unlike at other wavelengths, where the use and development of a PC material is driven by laser technology, here the discovery of PC emission from materials such as GaAs incorporating InAs quantum dots (QDs) has prompted a shift in excitation to longer wavelengths [55,56,[130][131][132][133]. The reason for this is to enable resonant excitation within the InAs QD structures.…”
Section: -1300 Nm Pumped Materialsmentioning
confidence: 99%
“…Firstly, an increase in optical pump power results in a rise in saturation bias field, this is typically not observed in bulk devices [134]. Secondly, the shorter carrier lifetime results in both increased signal at higher frequencies and the ability to sustain greater optical intensities prior to breakdown, compared with LT-GaAs devices [133]. The optical-to-THz conversion efficiency of the material can be improved by optimising the uniformity of QD sizes and the inter-QD spacing.…”
Section: -1300 Nm Pumped Materialsmentioning
confidence: 99%
“…Recently, we proposed more compact setups that use quantum dot (QD) based compact semiconductor lasers in conjuction QD based PCAs for generation of both pulsed and CW THz radiation [7][8][9][10] . Indeed, semiconductor materials incorporating InAs QDs in bulk GaAs possess all the properties required for efficient optical-to-THz conversion, such as short carrier lifetimes enabled by carrier capture into the dots 11 , while maintaining high carrier mobility 8 , unlike low temperature grown materials 2 .…”
Section: Operation Of Quantum Dot Based Terahertz Photoconductive Antennas Under Extreme Pumping Conditionsmentioning
confidence: 99%
“…The QD based photoconductive substrate provides an inherent compatibility [10] with the QD ultrafast lasers [11]. Since introduction, QDPCA have proven to be an efficient THz emitters capable of generating tunable CW [12] and pulsed [9], [13] THz radiation. Due to high-quality, defect-less QD substrates, such PCAs demonstrate exceptional thermal and electrical breakdown tolerance, allowing for up to 1 W of pump power into a single gap antenna [14].…”
Section: Introductionmentioning
confidence: 99%