Quantum dot nanostructures and molecular beam epitaxy

Franchi, S.; Trevisi, Giovanna; Seravalli, L.; Frigeri, P.

doi:10.1016/j.pcrysgrow.2005.01.002

Cited by 72 publications

(46 citation statements)

References 191 publications

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“…The IIIB-VB alloys with small size are essentially fabricated by vapor phase deposition methods, such as the molecular beam epitaxy technique [60] and the metal-organic chemical vapor deposition technique. [61] In this case, the important effect of coherent interface between particles and matrix on E g (x,D) must be considered, and the study of this effect is in progress in our group.…”

Section: Resultsmentioning

confidence: 99%

The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys

Zhu

Lang

Jiang

2008

Adv Funct Materials

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Based on a model for the size‐dependent bandgap energy of low‐dimensional semiconductor compounds, the alloying effect on the bandgap of nanoscale semiconductors is modeled without any adjustable parameter. The model predicts not only a trend of increasing bandgap with decreasing nanocrystal size but also Végard¢s relationship between the bandgap and the alloy composition when the size drops close to twice that of the critical size for the nanocrystals. The model predictions agree with available experimental results for bandgap changes of pseudo‐binary IIB–VIB chalcogenide semiconductor nanocrystals.

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Section: Resultsmentioning

confidence: 99%

The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys

Zhu

Lang

Jiang

2008

Adv Funct Materials

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“…The PL band is the convolution of all the emission lines of every single QD which is excited; the lines have an homogenous broadening, due to optical recombination and scattering by phonons and impurities, and an inhomogenous one, related to differences in size, shape and composition of individual QDs. Therefore, the shape of the PL bands reflects the distribution of quantum confined energy levels in QDs [S. Franchi et al, 2003 ].…”

Section: Photoluminescence (Pl)mentioning

confidence: 99%

Self-Assembled InAs(N) Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (100)*

Pulzara-Mora¹,

Rojas-Ramírez²,

García³

et al. 2012

State-of-the-Art of Quantum Dot System Fabrications

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“…These typically involve introducing materials that increase the QD size or reduce the strain, which, in turn, lowers the energies of the confined states in the QD [14][15][16][17]. For example, decreasing the growth rate of InAs [18,19] and the use of atomic layer molecular beam epitaxy (ALMBE) [20] are both effective methods to increase QD size [21,22].…”

Section: Introductionmentioning

confidence: 99%

Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots

et al. 2017

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We report a comprehensive study of exciton confinement in self-assembled InAs quantum dots (QDs) in strain-engineered metamorphic In x Ga 1-x As confining layers on GaAs using low-temperature magnetophotoluminescence. As the lattice mismatch (strain) between QDs and confining layers (CLs) increases from 4.8% to 5.7% the reduced mass of the exciton increases, but saturates at higher mismatches. At low QD-CL mismatch there is clear evidence of spillover of the exciton wave function due to small localization energies. This is suppressed as the In content x in the CLs decreases (mismatch and localization energy increasing). The combined effects of low effective mass and wave-function spillover at high x result in a diamagnetic shift coefficient that is an order of magnitude larger than for samples where In content in the barrier is low (mismatch is high and localization energy is large). Finally, an anomalously small measured Bohr radius in samples with the highest x is attributed to a combination of thermalization due to low localization energy, and its enhancement with magnetic field, a mechanism which results in small dots in the ensemble dominating the measured Bohr radius.

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Quantum dot nanostructures and molecular beam epitaxy

Cited by 72 publications

References 191 publications

The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys

The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys

Self-Assembled InAs(N) Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (100)*

Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots

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