Quantum-dot nanodevices with carbon nanotubes

Ishibashi, Koji; Moriyama, Satoshi; Tsuya, Daiju; Fuse, Tomoko; Suzuki, Masaki

doi:10.1116/1.2201054

Cited by 31 publications

(16 citation statements)

References 43 publications

(27 reference statements)

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“…1,2 Compared with other self-assembled one-dimensional materials, e.g., carbon nanotubes, 3 SiNWs allow us to use matured Si fabrication processes, which enhances reliability and reproducibility of the fabricated devices. These SiNWs with the diameters that are difficult to realize with conventional lithography techniques could be attractive building blocks for extremely small quantum-dot based nanodevices and have stimulated extensive interest in the past years.…”

mentioning

confidence: 99%

Classical Coulomb blockade of a silicon nanowire dot

Huang

Fukata

Shimizu

et al. 2008

Applied Physics Letters

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Articles you may be interested inCoulomb blockade behavior in an indium nitride nanowire with disordered surface states Appl. Phys. Lett. 95, 092110 (2009); 10.1063/1.3216071Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature Single electron transistors ͑SETs͒ have been fabricated with an individual n-type single-crystal silicon nanowire ͑SiNW͒ that was grown by a catalytic chemical vapor deposition technique, and their transport properties have been measured in low temperatures. The SiNW-SET in the present work exhibited well pronounced Coulomb oscillations in a wide gate voltage range from −10 to 10 V, featuring in uniform peak height, uniform full width at half maximum, and equidistant peak spacing. The charging energy turned out to be 64 eV. The temperature dependence of Coulomb oscillations revealed that the dot worked within the classical Coulomb blockade model.

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confidence: 99%

Classical Coulomb blockade of a silicon nanowire dot

Huang

Fukata

Shimizu

et al. 2008

Applied Physics Letters

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“…19,20,26,27 From the low temperature (4.2 K) electronic transport measurements of 50 devices, we found that the majority of the devices with R T > 100 kΩ show SET behavior. The approach is based on the integration of solution processed individual SWNTs between the pre-fabricated source and drain electrodes via DEP followed by deposition of a metal contact to create 100 nm SWNT devices.…”

Section: Introductionmentioning

confidence: 88%

Towards parallel fabrication of single electron transistors using carbon nanotubes

2015

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Single electron transistors (SETs) are considered to be promising building blocks for post CMOS era electronic devices, however, a major bottleneck for practical realization of SET based devices is a lack of a parallel fabrication approach. Here, we have demonstrated a technique for the scalable fabrication of SETs using single-walled carbon nanotubes (SWNTs). The approach is based on the integration of solution processed individual SWNTs via dielectrophoresis (DEP) at the selected position of the circuit with a 100 nm channel length, where the metal-SWNT Schottky contact works as a tunnel barrier. Measurements carried out at a low temperature (4.2 K) show that the majority of the devices with a contact resistance (RT) > 100 kΩ display SET behavior. For the devices with 100 kΩ < RT < 1 MΩ, periodic, well-defined Coulomb diamonds with a charging energy of ∼14 meV, corresponding to the transport through a single quantum dot (QD) was observed. For devices with high RT (>1 MΩ) multiple QD behavior was observed. From the transport study of 50 SWNT devices, a total of 38 devices show SET behavior giving a yield of 76%. The results presented here are a significant step forward for the practical realization of SET based devices.

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“…However, most of the reported gold single electron transistors, which showed promising results such as a "high working temperature" [9]-[11], used a zero dimensional quantum dot, a nanoparticle, resulting in a difficult gate control of the charge. Thus, in order to develop a technology like carbon nanotube one charge devices [12] that show similar dimensions, the investigation of the gold nanowire electrical transport should provide valuable results given the higher atomic number of this chemical element. We present here the fabrication process and electrical characteristics of a gold based Single Electron Transistor (SET): wet synthesized ultra-thin AuNWs used as a quantum dot and connected to metal electrodes patterned with electron beam lithography.…”

Section: Introductionmentioning

confidence: 99%

Coulomb blockade in a granular material made of gold nanowires

Guérin

Yoshihira

Kura

et al. 2012

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)

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Uniform, 2 nm diameter gold nanowires were synthesized through the reduction of gold(III) chloride in an oleylamine matrix. They were top-contacted on a Si/Si02 substrate with metallic electrodes to manufacture back-gated transistors. Due to thermal breakage, the gold nanowires were fragmented into a granular material and the non-linear current-bias voltage characteristics measured on the devices from 7 K up to 300 K were described by the Coulomb blockade theory in a nearly one-dimensional quantum dot array. The electronic transport was governed by sequential tunneling at an applied bias above the global Coulomb blockade threshold, whereas in the Coulomb blockade regime, inelastic cotunneling was dominant up to 70 K, at which point it crossed over to activated behavior. The current dependence on the gate voltage that showed irregular oscillations was explained by the superimposition of Coulomb oscillation patterns generated by each different dot in the one-dimensional array. The competitive effects of excitation energy and stochastic Coulomb blockade balanced the number of current peaks observed.

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Quantum-dot nanodevices with carbon nanotubes

Cited by 31 publications

References 43 publications

Classical Coulomb blockade of a silicon nanowire dot

Classical Coulomb blockade of a silicon nanowire dot

Towards parallel fabrication of single electron transistors using carbon nanotubes

Coulomb blockade in a granular material made of gold nanowires

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