Quantum-dot-like electrical transport of free-standing reduced graphene oxide paper at liquid helium temperatures

Voitsihovska, O.O.; Rudenko, R.M.; Abakumov, Alexander; Bychko, Igor; Poroshin, V. N.

doi:10.1016/j.diamond.2022.109538

Cited by 4 publications

(4 citation statements)

References 60 publications

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“…For the commercial diode, as temperature increases, the barrier voltage decreases, as expected in devices with p-n junctions based on semiconductors 61,62 . In the prototypes fabricated in this work, a non-linear effect was observed in the I-V curves for low temperatures up to approximately 140 K, which is consistent with previous reports by Voitsihovska et al 63 , and Rahaman et al 64 Also, for higher temperatures until 300 K, this effect disappears and an ohmic behavior is evidenced, within the foregoing range of currents, this behavior agrees with electrical linear responses for temperatures between 150 and 300 K, as reported by Abid et al 65 , Bonavolontà et al 17 , and Joung and Khondaker 38 in rGO samples. This can be explained considering that, for low temperatures, the effect of the metal-semiconductor junction between the electrical contacts and the GOF sample becomes predominant.…”

Section: Resultssupporting

confidence: 92%

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

Sánchez-Trujillo

Osorio-Maldonado

Prías‐Barragán

2023

Sci Rep

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The rapid development of optoelectronic applications for optical-to-electrical conversion has increased the interest in graphene oxide material. Here, graphene oxide films (GOF) were used as source material in an infrared photodetector configuration and the temperature dependence of the electrical conductivity was studied. GOF were prepared by the double-thermal decomposition (DTD) method at 973 K, with a fixed carbonization temperature, in a pyrolysis system, under a controlled nitrogen atmosphere, over quartz substrates. Graphene oxide films were mechanically supported in a photodetector configuration on Bakelite substrates and electrically contacted with copper wires and high-purity silver paint. Morphological images from the GOF’s surface were taken employing a scanning electron microscope and observed a homogeneous surface which favored the electrical contacts deposition. Vibrational characteristics were studied employing Raman spectroscopy and determined the typical graphene oxide bands. GOF were used to discuss the effect of temperature on the film’s electrical conductivity. Current–voltage (I–V) curves were taken for several temperatures varying from 20 to 300 K and the electrical resistance values were obtained from 142.86 to 2.14 kΩ. The GOF electrical conductivity and bandgap energy (Eg) were calculated, and it was found that when increasing temperature, the electrical conductivity increased from 30.33 to 2023.97 S/m, similar to a semiconductor material, and Eg shows a nonlinear change from 0.33 to 0.12 eV, with the increasing temperature. Conduction mechanism was described mainly by three-dimensional variable range hopping (3D VRH). Additionally, measurements of voltage and electrical resistance, as a function of wavelength were considered, for a spectral range between 1300 and 3000 nm. It was evidenced that as the wavelength becomes longer, a greater number of free electrons are generated, which contributes to the electrical current. The external quantum efficiency (EQE) was determined for this proposed photodetector prototype, obtaining a value of 40%, similar to those reported for commercial semiconductor photodetectors. This study provides a groundwork for further development of graphene oxide films with high conductivity in large-scale preparation.

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Section: Resultssupporting

confidence: 92%

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

Sánchez-Trujillo

Osorio-Maldonado

Prías‐Barragán

2023

Sci Rep

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“…Voitsihovska et al observed ES‐VRH in the rGO as well. [ 18 ] The localization length in the work was shown to be around several nm.…”

Section: Resultsmentioning

confidence: 86%

“…Morphology and structure peculiarities of the samples of various nature are reflected in electron transport mechanisms, while the analysis of the temperature dependences of electrical resistance is a relevant approach to establish the mechanisms, [16][17][18][19] the wider the temperature range, the more details can be established and various mechanisms can be found. Temperature dependences of the electrical resistance of the bulk composite samples and rGO-paper sample with silver paste electrical contacts were measured from room temperature down to 4.2 K using four-probe technique at as low dc voltage bias as possible, in the linear region of current--voltage curves.…”

Section: Electron Transport Mechanismmentioning

confidence: 99%

“…These defects lead to localization of electrons in sp 2 graphene islands at low temperatures. [16][17][18] With increasing reduction degree of GO, the properties of rGO change from dielectric to semiconducting and semimetallic at the highest reduction degree, conduction mechanism being a combination of hopping and thermally activated conduction in moderately reduced GO. [19] In these works, electron transport in rGO was shown to occur by the Efros-Shklovskii variable range hopping (ES-VRH), which induced by electrons localization on sp 2 domains.…”

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confidence: 99%

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Detailed Morphology and Electron Transport in Reduced Graphene Oxide Filled Polymer Composites with a Segregated Structure

Kuznetsov,

Gudkov,

Ermakov

et al. 2024

Physica Status Solidi (a)

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Polymer composites of a segregated network structure are dielectric polymer granules coated with electrically conductive nanoparticles at a low content, the quantity of the junctions between the granules determines the composites' mechanical properties, and the percolation network formed by the nanoparticles determines the electrical conductivity. Here, the morphology and electron‐transport properties in reduced graphene oxide (rGO)‐filled composites with a segregated structure based on polyvinyl chloride (PVC), poly(vinylidene ﬂuoride‐co‐tetraﬂuoroethylene) (P(VDF‐TFE)), and ultrahigh‐molecular‐weight polyethylene (UHMWPE) are studied. Optical and electron microscopies study of the microtome‐formed cross sections have shown the morphology to be dependent on the polymer—the thinnest rGO layers are in UHMWPE‐based composites, the thicker rGO layers are in PVC‐ and P(VDF‐TFE)‐based ones. The electrical conduction of the composites and the rGO‐paper occurs through the same hopping conduction mechanisms within the wide temperature range, which allows to use the composites in applications where pure rGO is considered. Owing to thicker rGO layers open to the environment, PVC‐ and P(VDF‐TFE)‐based composites are more attractive, rather than the UHMWPE ones, in applications where layered materials are needed, for example, in lithium‐ion batteries or supercapacitors. The UHMWPE‐based composites look more promising as electrically conductive materials when mechanical strength is important.

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The effect of 1 MeV electron irradiation on charge carrier localization in graphene quantum dot array of reduced graphene oxide

Rudenko,

Voitsihovska,

Abakumov

et al. 2024

Diamond and Related Materials

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Quantum-dot-like electrical transport of free-standing reduced graphene oxide paper at liquid helium temperatures

Cited by 4 publications

References 60 publications

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

Detailed Morphology and Electron Transport in Reduced Graphene Oxide Filled Polymer Composites with a Segregated Structure

The effect of 1 MeV electron irradiation on charge carrier localization in graphene quantum dot array of reduced graphene oxide

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