Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics

Abstract

A theory of static (threshold and power) characteristics of novel diode lasers – quantum dot (QD) lasers with asymmetric barrier layers (ABLs) – is developed. The barrier layers are asymmetric in that they have considerably different heights for the carriers of opposite signs. The ABL located on the electron- (hole-) injecting side of the structure provides a low barrier (ideally no barrier) for electrons (holes) [so that it does not prevent electrons (holes) from easily approaching the active region] and a high barrier for holes (electrons) [so that holes (electrons) injected from the opposite side of the structure do not overcome it]. The use of ABLs should thus ideally prevent the simultaneous presence of electrons and holes (and hence parasitic electron – hole recombination) outside the QDs. It is shown in this work that in such a case of total suppression of parasitic recombination, the QD lasers with ABLs offer close-to-ideal performance: the threshold current density is below 10 A cm−2 at any temperature, the absolute value of the characteristic temperature is above 1000 K (which manifests a virtually temperature-independent operation), the internal differential quantum efficiency is practically unity, and the light – current characteristic is linear at any pump current.

Optimizing the Quantum Dot Lasers for High-Speed Operation: Novel Versus Conventional Designs

“…The ABL in the hole-injecting side should prevent electrons from entering that side while not hindering the hole-injection into the active region. A laser utilizing ABLs was termed a bandedge-engineered laser [8,9,14] or an ABL laser [15][16][17].…”