Carbon-based all-inorganic CsPbI
x
Br3–x
perovskite solar cells offer
high
stability against heat and humidity and a suitable band gap for tandem
and semitransparent photovoltaics. In CsPbI
x
Br3–x
perovskite films, the defects
at grain boundaries (GBs) cause charge trapping, reducing the efficiency
of the cell. Electronic deactivation of GB has been a conventional
strategy to suppress the trapping, but at the cost of charge carrier
transport through the boundaries. Here, we turn the GBs into benign
charge transport pathways with the aid of bipolar charge transport
semiconductors, namely, Ti3C2T
X
(MXene) and Spiro-OMeTAD, respectively. Thanks to the synergistic
effects of both n- and p-type transport media, the charge transport
is improved and balanced at the GBs. As a result, the cells achieve
an efficiency of 12.7%, the highest among all low-temperature-processed
carbon-based inorganic perovskite solar cells. Benign GBs also lead
to enhanced light and aging stabilities. Our work demonstrates a proof-of-concept
strategy of benign electronic modulation of GBs for solution-processed
perovskite solar cells.