Quantum‐Dot Infrared Photodetectors: In Search of the Right Design for Room‐Temperature Operation

Luryi, Serge; Xu, Junzhong; Zaslavsky, Alexander

doi:10.1002/9780470649343.ch32

Cited by 7 publications

(8 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another possibility to suppress photoelectron relaxation and to increase a photoelectron lifetime is related with the interdot kinetics. In theoretical works [ 6 - 9 ], we proposed to suppress the capture processes by means of potential barriers in specially engineered QD structures. Potential barriers are always created, when electrons populating the dots are taken from the specific areas located relatively far from the dots.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers

et al. 2010

View full text Add to dashboard Cite

Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.

show abstract

Section: Introductionmentioning

confidence: 99%

“…Potential barriers are always created, when electrons populating the dots are taken from the specific areas located relatively far from the dots. Changing the position of dopants and doping level, one can manage the potential barriers around dots and control the photoelectron capture processes [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers

et al. 2010

View full text Add to dashboard Cite

show abstract

“…In recent publications [19][20][21][22][23][24] Here we report the results of the Monte-Carlo modeling of photoelectron kinetics in the lateral QD structures with collective potential barriers. This structure and its band diagram are shown in Fig.…”

Section: Qdips Based On Lateral Structures With Collective Barriersmentioning

confidence: 98%

Quantum dot photodetectors based on structures with collective potential barriers

et al. 2010

Self Cite

View full text Add to dashboard Cite

It is known that major restrictions of room-temperature semiconductor photodetectors and some other optoelectronic devices are caused by short photoelectron lifetime, which strongly reduces the photoresponse. Here we report our research on advanced optoelectronic materials, which combine manageable photoelectron lifetime, high mobility, and quantum tuning of localized and conducting states. These structures integrate quantum dot (QD) layers and correlated QD clusters with quantum wells (QWs) and heterointerfaces. The integrated structures provide many possibilities for engineering of electron states as well as specific kinetic and transport properties. Thus, these structures have the strong potential to overcome the limitations of traditional QD and QW structures. The main distinctive characteristic of the QD structures with collective potential barriers is an effective control of photoelectron capture due to separation of highly mobile electrons transferring the photocurrent along heterointerfaces from the localized electron states in the QD blocks (rows, planes, and various clusters). Besides manageable photoelectron kinetics, the advanced QD structures will also provide high coupling to radiation, low generation-recombination noise, and high scalability.

show abstract

“…Our unique approach is based on engineering of photoelectron processes using (i) gate bias-manageable potential barriers around single QDs [15][16][17][18] and barriers around QD planes in the lateral structures [19][20] and (ii) barriers around QD clusters in the vertical structures [20][21][22][23][24]. Potential barriers around QDs are formed by electrons bounded in dots and ionized impurities in the depletion region.…”

Section: Approaches and Methodsmentioning

confidence: 99%

Sensitive Infrared Photodetectors: Optimized Electron Kinetics for Room-Temperature Operation

Mitin¹,

Sergeyev²

2010

View full text Add to dashboard Cite

Standard Form 298 (Rev. 8/98) REPORT DOCUMENTATION PAGEPrescribed by ANSI Std. Z39.18 Form Approved OMB No. 0704-0188The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, The research focused on design of room-temperature detectors based on advanced quantum dot (QD) nanostructures with optimized photoelectron kinetics. It has been demonstrated that potential barriers around QDs and/or QD clusters significantly increase the photoelectron lifetime and improve the device responsivity, photoconductive gain, and sensitivity. Combining QD nanoblocks with various positions of dopants it is possible to create unique distribution of potential profile, which forces photoelectrons to move in the designated areas and to avoid QDs. Changing the electron occupation of QDs one can manage the barriers and control the photoelectron motion. The proposed, designed, and investigated advanced QD structures have a set of characteristics making them especially suitable for IR: (i) Manageable kinetics, which allows for tuning the photocarrier lifetime to control basic sensor characteristics, such as operating time, responsivity, and detectivity; (ii) Tunable highly-selective coupling to radiation; (iii) High photoconductive gain and responsivity; (iv) Low generation-recombination noise due to the long photoelectron lifetime. This research focused on design of room-temperature detectors based on advanced quantum dot (QD) nanostructures with optimized kinetics of photoelectrons. It has been demonstrated that potential barriers around QDs and/or QD clusters significantly increase the photoelectron lifetime (the capture time of photoelectrons) and improve the device responsivity, photoconductive gain, and sensitivity. Combining QD nanoblocks with various positions of dopants it is possible to create unique distribution of potential profile, which forces photoelectrons to move in the designated areas with the lower potential and to avoid dots. Moreover, changing the electron occupation of quantum dots one can manage the potential barriers around dots and control the photoelectron motion. The proposed, designed, and investigated advanced QD structures have a set of characteristics making them especially suitable for IR: (i) Manageable photoelectron kinetics, which allows for tuning the photocarrier lifetime to control basic sensor characteristics, such as operating time, responsivity, and detectivity; (ii) Tunable highly-selective coupling to radiation due to control of QD levels; (iii) High photoconductive gain and responsivity; (iv) Low generation-recombination noise due to the long photoelectron lifetime. The research has produced a provisional patent, ten jour...

show abstract

Quantum‐Dot Infrared Photodetectors: In Search of the Right Design for Room‐Temperature Operation

Cited by 7 publications

References 17 publications

Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers

Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers

Quantum dot photodetectors based on structures with collective potential barriers

Sensitive Infrared Photodetectors: Optimized Electron Kinetics for Room-Temperature Operation

Contact Info

Product

Resources

About