Quantum dot infrared photodetector enhanced by avalanche multiplication

Zavvari, Mahdi; Ahmadi, Vahid; Mir, Amna; Darabi, Elham

doi:10.1049/el.2012.0226

Cited by 16 publications

(5 citation statements)

References 8 publications

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“…Responsivity of a photodetector is defined as the ratio of electrical output current the optical input power and can be calculated from the following expression (Zavvari et al 2012):…”

Section: Responsivitymentioning

confidence: 99%

Tunable far infrared detection using quantum rings-in-well intersubband photodetectors

2015

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A novel design of quantum ring intersubband photodetectors is proposed based on quantum rings-in-well structure and its performance characteristics studied by simulation. The photon absorption occurs for intersubband transitions between quantum ring sub-bands and well states. The detector is expected to be better controlled over operating wavelength and normal incidence sensitivity in far infrared. Since the quantum well states change by electric field, the peak responsivity wavelength is voltage tunable. Our results show that increasing the bias voltage to 5 V leads to a red-shift about 4 lm in peak wavelength. For proposed detector a quantum-mechanical approach is introduced for calculation of photoconductive gain. Peak responsivity about 0.6 A/W at k = 20 lm is achieved at T = 77 K using this detector.

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“…Responsivity of a photodetector is defined as the ratio of electrical output current the optical input power and can be calculated from the following expression (Zavvari et al 2012):…”

Section: Responsivitymentioning

confidence: 99%

Tunable far infrared detection using quantum rings-in-well intersubband photodetectors

2015

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“…13,14 In our recently study, we have used an additional multiplication layer to gain the output photocurrent and hence reach higher outputs. 15 As can be seen from Fig. 1, the proposed device is a two terminal photodetector with separated absorption and multiplication regions based on GaAs material.…”

Section: Introductionmentioning

confidence: 98%

Dynamics of Avalanche Quantum Dot Infrared Photodetectors

Zavvari

Ahmadi

2012

Mod. Phys. Lett. B

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Time and frequency response of an avalanche quantum dot infrared photodetector (A-QDIP) operating at long infrared (IR) wavelengths is calculated and the effect of its structure on the dynamic behavior is studied. For this purpose, the rate equations of different regions are numerically solved considering the boundary conditions. Results show that detector with long multiplication region has a slower time response. Also frequency analysis predicts a 3-dB bandwidth above 100 GHz for a device with multiplication length of 200 nm. Gain bandwidth product (GBP) is calculated and a value of about 1000 GHz is obtained. Effect of charge layer doping on dynamic response of detector is also studied and results show that increase in doping improves the GBP while the bandwidth is reduced. We also study the effect of quantum dots of absorption region on frequency response of device and results show that longer electron relaxation time into quantum dot decreases the bandwidth of detector.

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“…Krishna et al coupled intersubband QD detector with a thin, low noise GaAs avalanche layer through a tunnel barrier and observed the SNR enhancement by a factor of 5 [18]. Also, Zavvari et al integrated a multiplication layer with a quantum dot infrared photodetector to increase generated photocurrent and achieved a higher responsivity of 12 A/W and higher specific detectivity of 6×109 cm.Hz1/2/W at 11 µm [19]. Based on these studies, in this paper we use avalanche multiplication for amplification and enhancement the responsivity of a QRIP.…”

Section: Introductionmentioning

confidence: 99%