Quantum dot heterostructures: Fabrication, properties, lasers (Review)

Spectral properties of a short-range impurity in a quantum dot

“…Moreover, dimension and shape of a quantum dot affect considerably the most important characteristics of the corresponding devices: relaxation and recombination time, Auger recombination coefficient etc, thus a possibility arises to control such characteristics in manufacturing the devices. 2,3,4 Another way to control the properties of a quantum dot is instilling an impurity into the dot. Therefore, the investigation of spectral properties of a quantum dot with impurities as well as the dependence of the spectrum on the geometric parameters of the dot and physical characteristics of the impurity is an important problem of nano-and mesoscopic physics (see, e.g., in Refs.…”

Boundary Processes in Electrolyte — Silicon Interface Area During Self–organization of Mosaic Structure of 3d–islands of Porous Silicon Nanocrystallites at Long–term Anode Etching of P–si (100) in Electrolyte With an Internal Source of Current

“…Эффекты самоорганизации наноразмерных структур на по-верхности твердого тела под дей-ствием этих сил отчетливо прояв-ляются, например, в процессах их эпитаксиального роста [7][8][9].…”

Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix

“…Thermal treatments of these layers at temperatures above 500 ºC for 1 hour led to the formation of α-Sn precipitates, β-Sn precipitates, precipitates that consisted of both α-Sn and β-Sn, and misfit dislocations [5][6][7]. While these α-Sn precipitates may be considered to constitute QDs in this material system (according to the requirements given above [2]), the simultaneously present misfit dislocations are clearly undesirable for device applications.…”

“…The energy band gap of the QDs must be smaller than that of the surrounding semiconductor matrix. No structural defects such as dislocations, which lead to non-radiative recombination, are allowed to exist in the QDs [2].…”