Quantum dot devices for optoelectronics applications

Abstract

This work focused on the optoelectronics applications of nitride-based quantum dot devices. It includes the growth and characterization of InGaN/GaN self-assembled quantum dots (SAQDs) and related optoelectronic devices (MQD LEDs and MSM PDs with QDs) by metalorganic vapor phase epitaxy (MOVPE). The optical and structural properties of InGaN/GaN nanostructures have been characterized by photoluminescence (PL), Raman, scanning near-field optical microscopy (SNOM), atomic force microscopy (AFM), and high-resolution transmission electron microscopy (HRTEM), respectively.Index Terms-GaN, quantum dots, photodiodes, light-emitting diodes, metal-organic chemical vapor deposition, Raman, SNOM.