Quantum Devices Using Multi-Dots Structures

Abstract

Nowadays, due to the advances in nanolithography technology it is possible to fabricate structures whose electronic properties correspond to that of a quasi-one-dimensional electron gas. Such structures allow us to observe ballistic quantum transport at low temperatures, and remarkable experimental observations have resulted1. Many theoretical studies have investigated conductance fluctuations2 and voltage controlled defects. Cahay et al3 studied the problem of localization associated with the conductance fluctuations of an array of elastic scatterers. Joe et al4 discussed the effects of a voltage controlled impurity for the conductance of a single open quantum box. As the impurity size is changed, it causes conductance oscillations due to the interference of circulating and bound states of the quantum box. In this paper we analyze how changes in geometry of a structure with three open dots affect its electronic properties.