Quantum decoherence dynamics of divacancy spins in silicon carbide

Seo, Hosung; Falk, Abram L.; Klimov, Paul V.; Miao, Kevin C.; Galli, Giulia; Awschalom, D. D.

doi:10.1038/ncomms12935

Cited by 166 publications

(191 citation statements)

References 64 publications

(159 reference statements)

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“…3c). We apply a magnetic field B = 15 mT along the c-axis of the 4H-SiC crystal to suppress the heteronuclear-spin flip-flop processes and hence the decoherence [6,8]. The second laser pulse is used to reinitialize the system and read out the spin states of the V Si defects.…”

Section: Resultsmentioning

confidence: 99%

Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

et al. 2020

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Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time (T1) and spin coherence time (T2) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the T1 time against all types of irradiation and reveal a universal scaling of the T2 time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks. arXiv:1908.06829v1 [cond-mat.mtrl-sci]

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Section: Resultsmentioning

confidence: 99%

Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

et al. 2020

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“…There also exist several commercially viable polytypes which host dozens of candidate defects [14]. Among the most attractive defects in SiC are the silicon vacancies V Si , the divacancies V C V Si , and NV centers [15][16][17][18][19][20][21][22][23]. There are two silicon vacancies in 4H-SiC, V1, which has a zero-phonon line (ZPL) at 862 nm, and V2, which has a ZPL at 916 nm [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Resonant Optical Spin Initialization and Readout of Single Silicon Vacancies in 4H - SiC

Banks

Soykal²,

Myers-Ward

et al. 2019

Phys. Rev. Applied

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The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature optical properties that are essential for optical readout and coherent control of its spin and for the development of a spin-photon interface. The common features among individual defects include two narrow, nearly lifetime-limited optical transitions that correspond to ms= ± 3/2 and ms= ± 1/2 spin states with no discernable zero-field splitting fluctuations. Initialization and readout of the spin states is characterized by time-resolved optical spectroscopy under resonant excitation of these transitions, showing significant differences between the ±3/2 and ±1/2 spin states. These results are well-described by a theoretical model that strengthens our understanding of the quantum properties of this defect. arXiv:1811.01293v2 [cond-mat.mes-hall]

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“…Similarly, stable isolated DV (S=1) can be controlled coherently to the single-spin level [83] with T2=1.3 ms for DV ensembles at cryogenic temperatures [83,132]. Both V Si and DV have demonstrated a longer decoherence time of NV in diamond in the same type of material and with the same measurement conditions.…”

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confidence: 89%

“…Such techniques are important on one side to fully characterize a defect for its identification and assess its potential in quantum sensing. Color centres in material with a high electron spin state that can be addressed optically, can be used for quantum sensing by combining a series of spin control and manipulation methods described in [36], such as DC and AC magnetic field ODMR, Rabi and Ramsey oscillations, Hanh-echo and other more complicated sequence used to extend the lifetime of the electron spin (T2 coherence time) and its control, such as dynamic decoupling spin measurements [132]. It is out of the scope of this review to enter in details of these methods and the reader can refer to other review papers such as [99,133] or the specific papers where these methods have been applied to SiC [69,83,84].…”

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confidence: 99%

Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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Quantum decoherence dynamics of divacancy spins in silicon carbide

Cited by 166 publications

References 64 publications

Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

Influence of Irradiation on Defect Spin Coherence in Silicon Carbide

Resonant Optical Spin Initialization and Readout of Single Silicon Vacancies in 4H - SiC

Silicon carbide color centers for quantum applications

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