2011
DOI: 10.1103/physrevlett.107.026401
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Quantum Critical Transport near the Mott Transition

Abstract: We perform a systematic study of incoherent transport in the high temperature crossover region of the half-filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling of the form ρ(T, δU ) = ρc(T )f (T /To(δU )), with To(δU ) ∼ |δU | zν , and ρc(T ) ∼ T . The corresponding β-function displays a "strong coupling" form β ∼ ln(ρc/ρ), reflecting the peculiar mirror symmetry of the scaling curves. This behavior, which is surprisingly similar t… Show more

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Cited by 128 publications
(176 citation statements)
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“…At the critical end-point (red dots) the two solutions merge, and above it no true distinction between the phases exists; only a rapid crossover is observed upon variation of U or µ. Previous work [17,18] examined the vicinity of the interaction-driven MIT at half-filling; here we analyze the broad finite temperature crossover region between the half-filled Mott insulator and the doped Fermi liquid state [27][28][29][30]. This "Bad Metal" regime, displaying very different transport behavior than that found at half-filling, is the main focus of this work.…”
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confidence: 99%
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“…At the critical end-point (red dots) the two solutions merge, and above it no true distinction between the phases exists; only a rapid crossover is observed upon variation of U or µ. Previous work [17,18] examined the vicinity of the interaction-driven MIT at half-filling; here we analyze the broad finite temperature crossover region between the half-filled Mott insulator and the doped Fermi liquid state [27][28][29][30]. This "Bad Metal" regime, displaying very different transport behavior than that found at half-filling, is the main focus of this work.…”
mentioning
confidence: 99%
“…This can be achieved by focusing on the "maximally frustrated Hubbard model", where an exact solution can be obtained by solving Dynamical Mean-Field Theory (DMFT) equations [16] in the paramagnetic phase. Although various aspects of the DMFT equation have been studied for more than twenty years, only very recent work [17,18] established how to identify the quantum critical (QC) behavior associated with the interaction-driven Mott transition at half-filling.Here we present a large-scale computational study across the entire phase diagram, showing that qualitatively different transport behavior is found in doped Mott insulators. It reveals a clear and quantitative connection between BM phenomenology and the signatures of Mott quantum criticality, including the characteristic "mirror symmetry" [19] of the relevant scaling function.…”
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confidence: 99%
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“…We expect that the ω/T scaling behavior with enhanced critical exponents appears in a certain range of temperatures. This conjecture reminds us of a recent study, which demonstrates a critical behavior in electrical resistivity near Mott metal-insulator transition, in particular, at finite temperatures [31]. Although the Mott metalinsulator transition is the first order at zero temperature in dynamical mean-field theory, such a machinery verified the emergence of unexpected finite-temperature critical transport for a certain temperature domain near the Mott metal-insulator phase boundary.…”
Section: E Criticismmentioning
confidence: 93%