Quantum critical points in tunneling junction of topological superconductor and topological insulator

Zuo, Zheng-Wei; Kang, Dawei; Wang, Zhaowu; Li, Liben

doi:10.1016/j.physleta.2016.07.024

Cited by 2 publications

(2 citation statements)

References 62 publications

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“…It is worth noting that not only 2D and 3D TIs could form tunnel junctions, 1D topological superconductors and TI (integer) could also be used to fabricate tunnel junctions. However, special methods were needed—bosonization and renormalization group methods [ 158 ]. The interface was divided into the two parts.…”

Section: Application Of Tismentioning

confidence: 99%

The Property, Preparation and Application of Topological Insulators: A Review

et al. 2017

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Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2) The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3) Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE). Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET), laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N) are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI.

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Section: Application Of Tismentioning

confidence: 99%

The Property, Preparation and Application of Topological Insulators: A Review

et al. 2017

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“…Similar approaches have been used to study topological superconductivity in a variety of contexts. 45,[54][55][56][57][58][59]…”

Section: Grounded-superconductor Setupmentioning

confidence: 99%

Interaction effects in superconductor/quantum spin Hall devices: Universal transport signatures and fractional Coulomb blockade

et al. 2016

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Interfacing s-wave superconductors and quantum spin Hall edges produces time-reversal-invariant topological superconductivity of a type that can not arise in strictly 1D systems. With the aim of establishing sharp fingerprints of this novel phase, we use renormalization group methods to extract universal transport characteristics of superconductor/quantum spin Hall heterostructures where the native edge states serve as leads. We determine scaling forms for the conductance through a grounded superconductor and show that the results depend sensitively on the interaction strength in the leads, the size of the superconducting region, and the presence or absence of time-reversalbreaking perturbations. We also study transport across a floating superconducting island isolated by magnetic barriers. Here we predict e-periodic Coulomb-blockade peaks, as recently observed in nanowire devices, 1 with the added feature that the island can support fractional charge tunable via the relative orientation of the barrier magnetizations. As an interesting corollary, when the magnetic barriers arise from strong interactions at the edge that spontaneously break time-reversal symmetry, the Coulomb-blockade periodicity changes from e to e/2. These findings suggest several future experiments that probe unique characteristics of topological superconductivity at the quantum spin Hall edge.

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Quantum critical points in tunneling junction of topological superconductor and topological insulator

Cited by 2 publications

References 62 publications

The Property, Preparation and Application of Topological Insulators: A Review

The Property, Preparation and Application of Topological Insulators: A Review

Interaction effects in superconductor/quantum spin Hall devices: Universal transport signatures and fractional Coulomb blockade

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