Quantum corrections to conductivity of glassy Zr100−xCux alloys

Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)1−xNi alloys

“…Here we report the first, to the best of our knowledge, comprehensive study of the electronic properties of quinary MG system (TiZrNbCu) 1−x Ni x over a broad composition range (x ≤ 0.5) encompassing both the highentropy and the conventional alloy concentration range (x > 0.35). Electrical resistivities of all alloys are high (ρ ≥ 160 µΩcm) and show qualitatively the same variations with x and temperature as in corresponding binary MGs [39,40,41,42,43,44]. Superconducting transition temperatures T c decrease with x as expected from the split-band electronic density of states revealed by ultraviolet photoemission spectroscopy (UPS).…”

“…To the best of our knowledge the main mechanism(s) giving rise to the observed resistivities of amorphous TE-TL alloys has not been identified yet (e.g., [44,47,48]), whereas their temperature dependences seem to be dominated with the quantum interference effects (e.g. [40,41,42,47] [24] it is convenient to express the stoichiometry of our alloys in a form (TiZrNb) (…”

“…We have shown earlier [42] that dicates that the effects of incipient localization dominate the temperature dependence of resistivity in all these alloys. Some arguments [40,41,42] in support of this claim are: (1) very short electronic mean free paths, (2) a broad composition range showing a semiconducting resistivity behaviour, [19,22]. As already noted [19], such low T c s, comparable to these in amorphous Hf 1−x Cu x alloys [43], are unusual considering rather high contents of Nb (pure Nb has T c = 9.2 K), Zr and Ti which form alloys with T c s around 10 K, but are consistent with the results for amorphous Nb-Zr films which showed no superconductivity down to T = 1 K. The monotonic decrease of T c with x in our and all other TE 1−x TL x amorphous alloys (e.g., [43,45,46]) can be simply explained in terms of their electronic structures.…”

“…σ for both alloys shows asymptotic T and T 0.5 (upper abscissa) variations for temperatures below and above about 100 K respectively. These variations of σ probably reflect the temperature dependence of the inelastic scattering time of electrons in non-magnetic alloys[40,41,42,47]: τ −T for T > 100 K and follow from the expression for the electrical conductivity of three-dimensional disordered system in the regime of weak electron localization in the absence of magnetic field[52]:…”

Electrical transport properties of individual disordered multiwalled carbon nanotubes

“…Therefore, in the present system, it is believed that the disordered structure of this MWCNT combined with its quasi-one-dimensional nature strongly suppresses Coulomb screening to allow opening a Coulomb gap at the Fermi level. Furthermore, by comparing with other systems, 21,22 it is interesting to note that the fitting temperature expands in such a record wide range from 4.2 to 263 K, indicating an extremely short carrier scattering time of the order of 10 −15 s. Such a wide temperature range fitting has never been published for any materials in the literature. Since the fitting range of temperature is large, the electron-phonon interaction is also considered.…”