Quantum confinement induced metal-insulator transition in strongly correlated quantum wells of 
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 superlattices

James, Alyn D. N.; Aichhorn, Markus; Laverock, J.

doi:10.1103/physrevresearch.3.023149

Cited by 11 publications

(5 citation statements)

References 57 publications

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“…As with the results of monolayer [43], bilayer [40] or superlattice heterostructures [48] of SrVO 3 , the spectral weight from the V t 2g states in the x = 0.25 and 0.5 doped systems appears to fully redistribute to the Hubbard bands in this insulating phase. The UHB appears to have a momentum dependent dispersion in figures 4(c) and (d), similar to that seen in [48]. This dispersive UHB, which is strongly reminiscent of the underlying QP dispersion, is very prominent in the A(k, ω) of x = 0.25 system.…”

Section: Resultssupporting

confidence: 66%

“…These effects are also predicted in other vanadates where these can be tuned by strain [43][44][45][46][47]. Conversely, W can also be influenced by quantum confinement of heterostructure superlattices [48] in agreement with the corresponding experimental data [49][50][51][52].…”

Section: Introductionsupporting

confidence: 83%

“…This reduction in the quasiparticle bandwidth is greater than that achieved in other doped SrVO 3 systems, such as Sr x Ca 1−x VO 3 [13,61]. Correspondingly, the integrated spectral function at the Fermi level A(ω = 0) (displayed in figure 5(b)) increases as the quasiparticle peak width shrinks as the doping approaches x c , indicating the increasing influence of the local electron correlations within the t 2g orbitals (and has been seen for tuning U through the MIT in SrVO 3 superlattice heterostructures [48]). These can be explained by the U/W ratio increasing when approaching the MIT from high doping in the metallic phase.…”

Section: Resultsmentioning

confidence: 82%

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Composition-driven Mott transition within SrTi 1−x V x O₃

James,

Aichhorn,

Laverock

2024

Electron. Struct.

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The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO3 and SrTiO3. The electronic configuration of these perovskites differs by one electron associated to the transition metal species which gives rise to the drastically different electronic properties. Therefore, it is natural to look into how the electronic structure transitions between these bulk structures by using doping. Measurements of the substitutional doped SrTi1−xVxO3 shows an metal-insulator transition (MIT) as a function of doping. By using supercell density functional theory with dynamical mean field theory (DFT+DMFT), we show that the MIT is indeed the result of the combination of local electron correlation effects (Mott physics) within the t2g orbitals and the atomic site configuration of the transition metals which may indicate dependence on site disorder. SrTi1−xVxO3 may be an ideal candidate for benchmarking cutting-edge Mott-Anderson models of real systems. We show that applying an effective external perturbation on SrTi1−xVxO3 can switch the system between the insulating and metallic phase, meaning this is a bulk system with the potential use in Mott electronic devices.

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Section: Resultssupporting

confidence: 66%

Section: Introductionsupporting

confidence: 83%

Section: Resultsmentioning

confidence: 82%

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Composition-driven Mott transition within SrTi 1−x V x O₃

James,

Aichhorn,

Laverock

2024

Electron. Struct.

Self Cite

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“…For the superlattice structures [49][50][51] our results are obtained from exact DMRG calculations for finite chains (L = 36) with a periodical external potential: V i = V for the first X sites and V = 0 for the next Y sites, thus composing the superlattice modulation X : Y (Fig. 1c).…”

Section: Ii) Disordered Chains and Superlatticesmentioning

confidence: 99%

Linear entropy fails to predict entanglement behavior in low-density fermionic systems

Pauletti

Garcia

Canella

et al. 2023

Preprint

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Entanglement is considered a fundamental ingredient for quantum technologies and condensed matter systems are among the good candidates for quantum devices. For bipartite pure states the von Neumann entropy is a proper measure of entanglement, while the linear entropy, associated to the mixedness of the reduced density matrices, is a simpler quantity to be obtained and is considered to be qualitatively equivalent to the von Neumann. Here we investigate both linear and von Neumann entropies for quantifying entanglement in homogeneous, superlattice and disordered Hubbard chains. We find regimes of parameters for which the linear entropy fails in reproducing the qualitative behavior of the von Neumann entropy. This then may lead to incorrect predictions i) of maximum and minimum entanglement states and ii) of quantum phase transitions.

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“…These phenomena include superconductivity [240,241], room temperature ferromagnetism [242], metal-insulator transitions [243], and orbital reconstruction [244], with the clear potential for novel device physics [245]. DFT + U and DFT + DMFT have already been used to confirm emergent properties in heterostructures composed from transition metal oxides [246][247][248]. However, similar calculations for heterostructures built from f-electron materials will undoubtedly be more challenging than those for d-electron materials.…”

Section: Challenges With Modeling 5f Electronsmentioning

confidence: 99%

Advances in actinide thin films: synthesis, properties, and future directions

Vallejo¹,

Kabir²,

Poudel³

et al. 2022

Rep. Prog. Phys.

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Actinide-based compounds exhibit unique physics due to the presence of 5f electrons and serve in many cases as important technological materials. Targeted thin film synthesis of actinide materials has been successful in generating high-purity specimens in which to study individual physical phenomena. These films have enabled the study of the unique electron configuration, strong mass renormalization, and nuclear decay in actinide metals and compounds. The growth of these films, as well as their thermophysical, magnetic, and topological properties, have been studied in a range of chemistries, albeit far fewer than most classes of thin-film systems. This relative scarcity is the result of limited source material availability and safety constraints associated with the handling of radioactive materials. Here, we review recent work on the synthesis and characterization of actinide-based thin films in detail, describing both synthesis methods and modeling techniques for these materials. We review reports on pyrometallurgical, solution-based, and vapor deposition methods. We highlight the current state-of-the-art in order to construct a path forward to higher quality actinide thin films and heterostructure devices.

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Quantum confinement induced metal-insulator transition in strongly correlated quantum wells of SrVO3 superlattices

Cited by 11 publications

References 57 publications

Composition-driven Mott transition within SrTi 1−x V x O₃

Composition-driven Mott transition within SrTi 1−x V x O₃

Linear entropy fails to predict entanglement behavior in low-density fermionic systems

Advances in actinide thin films: synthesis, properties, and future directions

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Quantum confinement induced metal-insulator transition in strongly correlated quantum wells of SrVO3 superlattices

Cited by 11 publications

References 57 publications

Composition-driven Mott transition within SrTi 1−x V x O3

Composition-driven Mott transition within SrTi 1−x V x O3

Linear entropy fails to predict entanglement behavior in low-density fermionic systems

Advances in actinide thin films: synthesis, properties, and future directions

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Composition-driven Mott transition within SrTi 1−x V x O₃

Composition-driven Mott transition within SrTi 1−x V x O₃