Quantum confinement-induced enhanced nonlinearity and carrier lifetime modulation in two-dimensional tin sulfide

Zhang, Feng; Xu, Ning; Zhao, Jinlai; Wang, Yunzheng; Jiang, Xiantao; Zhang, Ye; Huang, Weichun; Hu, Lanping; Tang, Yanfeng; Xu, Shixiang

doi:10.1515/nanoph-2019-0448

Cited by 22 publications

(21 citation statements)

References 61 publications

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“…When the morphology of semiconductors is altered to low‐dimensions (0D QDs, 1D nanowire, and 2D film) from the bulk region, the continuous energy band is modified to discrete energy levels. [ 41,42 ] The energy value between these levels increases significantly, while the phonon energy remains unchanged. Notably, carrier–phonon interaction is an indispensable process during the carrier cooling.…”

Section: Morphology and Optical Characterizations Of 0d Mxenementioning

confidence: 99%

Zero‐Dimensional MXene‐Based Optical Devices for Ultrafast and Ultranarrow Photonics Applications

Gan

et al. 2020

Advanced Science

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In recent years, MXene has become a hotspot because of its good conductivity, strong broadband absorption, and tunable band gap. In this contribution, 0D MXene Ti 3 C 2 T x quantum dots are synthesized by a liquid exfoliation method and a wideband nonlinear optical response from 800 to 1550 nm is studied, which have a larger nonlinear absorption coefficient of-(11.24 ± 0.14) × 10-2 cm GW-1. The carrier dynamic processes of 0D MXene are explored with ultrahigh time resolution nondegenerate transient absorption (TA) spectroscopy, which indicates that the TA signal reaches its maximum in 1.28 ps. Furthermore, 0D MXene is used to generate ultrashort pulses in erbium or ytterbium-doped fiber laser cavity. High signal-to-noise (72 dB) femtosecond lasers with pulse durations as short as 170 fs with spectrum bandwidth of 14.8 nm are obtained. Finally, an ultranarrow fiber laser based on 0D MXene is also investigated and has a full width at half maximum of only 5 kHz, and the power fluctuation is less than 0.75% of the average power. The experimental works prove that 0D MXene is an excellent SA and has a promising application in ultrafast and ultranarrow photonics.

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Section: Morphology and Optical Characterizations Of 0d Mxenementioning

confidence: 99%

Zero‐Dimensional MXene‐Based Optical Devices for Ultrafast and Ultranarrow Photonics Applications

Gan

et al. 2020

Advanced Science

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“…Recently, a larger number of 2D materials have attracted attention, such as MXene, [131][132][133] graphyne, [134,135] borophene, [136,137] Group III monochalcogenide (e.g., InSe, [137] GeSe [138] ), and SnS. [139] Topological insulators (TI) are a new state of quantum matter, most of which are insulating, but the surface can conduct electricity. Compared with graphene, TI has some unique optoelectronic properties due to the combined effect of spin-orbit interaction and the surface state protected by time reverse symmetry.…”

Section: Black Phosphorus Topological Insulators and Other Emerging mentioning

confidence: 99%

“…[282] There are numerous studies on the non-reciprocal light propagation due to the non-linear discontinuity caused by the two materials being close together. [139,[283][284][285]…”

Section: All-optical Diodementioning

confidence: 99%

“…The synthesis and characterization of 2D materials is a large premise for studying the SSPM effect, as the quality of the material directly determines the outcome of the experiment. The preparation methods of 2D materials are mainly divided into two categories, [ 144–146 ] “top‐down” (e.g., mechanical cracking, [ 70–148 ] liquid exfoliation [ 36,149–151 ] ) and “bottom‐up” (e.g., chemical vapor deposition, [ 152,153 ] physical vapor deposition, [ 154,155 ] pulsed laser deposition, [ 156 ] wet‐chemical synthesis [ 157 ] ). Top‐down refers to peeling off the stacked layers in the bulk crystal into monolayer or multi‐layer 2D nanosheets by an external driving force, while bottom‐up refers to direct synthesis through a chemical reaction of precursors.…”

Section: Fundamentals Of 2d Material‐based Sspmmentioning

confidence: 99%

“…[ 282 ] There are numerous studies on the non‐reciprocal light propagation due to the non‐linear discontinuity caused by the two materials being close together. [ 139,283–285 ] Taking the research of Anand et al. as an example, Figure 9 a,b illustrates the schematic diagram of the diode based on asymmetric nonlinearity.…”

Section: Perspectives and Applications Of 2d Material‐based Sspmmentioning

confidence: 99%

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Recent Advances in Spatial Self‐Phase Modulation with 2D Materials and its Applications

et al. 2020

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In recent years, spatial self-phase modulation (SSPM) with two-dimensional (2D) materials has attracted the attention of many researchers as an emerging and ubiquitous nonlinear optical effect. In this review, the state of the art of 2D material-based SSPM is summarized. SSPM measures or tunes the nonlinearity of 2D materials, and it is also an effective approach to study the band structure of 2D materials. Several modified forms of SSPM, such as high-order, white-light-excited, vector field excited, and optically nonlinearly enhanced SSPM are also presented. Subsequently, the physical origin of the SSPM formation mechanism is compared and analyzed. Furthermore, the applications of SSPM with 2D materials, including passive photonic devices, generation of Bessel beams, and identifying the mode of the orbital angular momentum, are listed. Finally, several urgent problems of the SSPM with 2D materials, potential applications, and prospects for future development are presented.

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Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation

Mazumder

Nguyen

Aung

et al. 2023

Adv Funct Materials

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Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single‐element image sensors that allow reception of information and execution of in‐memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra‐thin (<3 nm) doped indium oxide (In2O3) layers are engineered to demonstrate a monolithic two‐terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof‐of‐concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real‐time, in‐sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand.

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Quantum confinement-induced enhanced nonlinearity and carrier lifetime modulation in two-dimensional tin sulfide

Cited by 22 publications

References 61 publications

Zero‐Dimensional MXene‐Based Optical Devices for Ultrafast and Ultranarrow Photonics Applications

Zero‐Dimensional MXene‐Based Optical Devices for Ultrafast and Ultranarrow Photonics Applications

Recent Advances in Spatial Self‐Phase Modulation with 2D Materials and its Applications

Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation

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