Quantum confinement effect in ZnO∕Mg0.2Zn0.8O multishell nanorod heterostructures

Jang, Eue Soon; Bae, Jun Young; Yoo, Jinkyoung; Park, Won Il; Kim, Dong Wook; Yi, Gyu Chul; Yatsui, Takashi; Ohtsu, M.

doi:10.1063/1.2162695

Cited by 57 publications

(41 citation statements)

References 20 publications

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“…3, the I ZnO ͑QW͒ peak position did not depend on the QB layer thickness of the coaxial nanorod quantum structures. This result was also clearly confirmed from PL spectra for thicker QB layer thicknesses of 12 and 78 nm, 8 indicating that the PL blueshift in the coaxial nanorod quantum structures results from a quantum confinement effect rather than the composition intermixing.…”

supporting

confidence: 52%

“…4,[6][7][8] These nanorod quantum structures exhibit a blueshift in the band edge PL peak due to a quantum confinement effect in ZnO well layers between the ZnMgO barrier layers. 4,[6][7][8][9] Meanwhile, several studies have reported on coaxial nanorod heterostructures including Ge/ Si, Si/ CdSe, and GaP / GaN. 1,10,11 However, quantum effects in coaxial nanorod quantum structures have rarely been reported, 7,8 and quantum confinement effect in the coaxial nanorod quantum structures has not thoroughly been studied.…”

mentioning

confidence: 99%

“…5 However, quantum phenomena can appear for ZnO / ZnMgO nanorod quantum structures with composition modulation along either the axial or radial direction. 4,[6][7][8] These nanorod quantum structures exhibit a blueshift in the band edge PL peak due to a quantum confinement effect in ZnO well layers between the ZnMgO barrier layers. 4,[6][7][8][9] Meanwhile, several studies have reported on coaxial nanorod heterostructures including Ge/ Si, Si/ CdSe, and GaP / GaN.…”

mentioning

confidence: 99%

“…4,[6][7][8][9] Meanwhile, several studies have reported on coaxial nanorod heterostructures including Ge/ Si, Si/ CdSe, and GaP / GaN. 1,10,11 However, quantum effects in coaxial nanorod quantum structures have rarely been reported, 7,8 and quantum confinement effect in the coaxial nanorod quantum structures has not thoroughly been studied. Here, we report on comprehensive studies of the fabrication and photoluminescent properties of ZnO / Mg 0.2 Zn 0.8 O coaxial nanorod quantum structures with a single quantum well layer.…”

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confidence: 99%

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Fabrication and photoluminescent characteristics of ZnO∕Mg0.2Zn0.8O coaxial nanorod single quantum well structures

Bae

Yoo

2006

Applied Physics Letters

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The authors report on fabrication and photoluminescent ͑PL͒ properties of ZnO / Mg 0.2 Zn 0.8 O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg 0.2 Zn 0.8 O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg 0.2 Zn 0.8 O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2364463͔One-dimensional semiconductor nanorod heterostructures have great potential for use as functional components for nanometer-scale electronics and optoelectronics. [1][2][3][4] In particular, heteroepitaxial nanorod quantum structures with well-defined interfaces greatly increase the versatility and power of building blocks used in many nanoscale devices. Two types of nanorod quantum structures are possible, depending on the composition modulation along either the axial or radial direction of the nanorods. Nanorod quantum structures with composition modulation along the radial direction can be formed into coaxial nanorod quantum structures when the overlayers in the quantum structures are covered uniformly and homogeneously over the side walls. For these coaxial nanorod quantum structures, the carriers are confined to the quantum wells, generating one or more welldefined bound states in the wells. Because of the quantum effect, the wavelength of the emitted light can be tuned by changing the thickness of the quantum well, and the characteristics of the light emitting device can also be significantly enhanced. In addition, carriers can be cylindrically localized in the quantum well, resulting in the formation of low dimensional carrier gas. These quantum phenomena are necessary for applications of many sophisticated quantum devices as well as high speed electronic devices.ZnO is a well known wide band gap semiconductor with a fundamental band gap energy of 3.3 eV at room temperature. As a wide band gap semiconductor, ZnO exhibits heavy effective electron and hole carrier masses of 0.28m e and 1.8m e , much larger than those of narrow band gap semiconductors such as InAs and InP. Since the Bohr radius of a free exciton in ZnO is as small as 1.8 nm, quantum size effects are not observed for homogeneous ZnO nanorods unless the diameter of the ZnO nanorods is comparable to the Bohr radius. Even for ultrafine ZnO nanorods with a diameter of 8 nm, the photoluminescence ͑PL͒ blueshift is only 42 meV. 5 However, quantum phenomena can appear for ZnO / ZnMgO nanorod quantum structures with composition modulation along either the axial or radial direction. 4,[6][7][8] These nanorod quantum structures...

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confidence: 52%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Fabrication and photoluminescent characteristics of ZnO∕Mg0.2Zn0.8O coaxial nanorod single quantum well structures

Bae

Yoo

2006

Applied Physics Letters

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“…For example, embedding quantum structures in a single nanorod can confine both carriers and emitted photons efficiently in the nanorod as well as can tune the wavelength of emitted light. [6][7][8][9] Despite the successful fabrications of the nanorod heterostructures, nanodevice applications of the nanorod heterostructures have rarely been reported. Only a few studies have been reported about the use of the heterostructures as components of light emitting nanodevices and high electron mobility nanotransistors 7,10 and the practical use of the nanodevices has still remained out of reach.…”

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confidence: 99%

Near ultraviolet light emitting diode composed of n-GaN∕ZnO coaxial nanorod heterostructures on a p-GaN layer

An¹,

Yi²

2007

Applied Physics Letters

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The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes ͑LEDs͒ composed of n-GaN / ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN / ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.

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ZnO‐Based Nanowire Heterostructures

Feuillet¹,

Ferret²

2014

Wide Band Gap Semiconductor Nanowires 2

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Quantum confinement effect in ZnO∕Mg0.2Zn0.8O multishell nanorod heterostructures

Cited by 57 publications

References 20 publications

Fabrication and photoluminescent characteristics of ZnO∕Mg0.2Zn0.8O coaxial nanorod single quantum well structures

Fabrication and photoluminescent characteristics of ZnO∕Mg0.2Zn0.8O coaxial nanorod single quantum well structures

Near ultraviolet light emitting diode composed of n-GaN∕ZnO coaxial nanorod heterostructures on a p-GaN layer

ZnO‐Based Nanowire Heterostructures

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