Quantum confinement effect in Si/Ge core-shell nanowires: First-principles calculations

Yang, Li; Musin, R. N.; Wang, Xiaoqian; Chou, M. Y.

doi:10.1103/physrevb.77.195325

Cited by 76 publications

(109 citation statements)

References 24 publications

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“…5(c) and 5(d). In conclusion, the VBE charge is in the Ge composition while the CBE charge is in the Si composition, regardless of whether the nanowire is of a Si-core/Ge-shell or Ge-core/Si-shell structure (L. Yang et al 2008;Peng et al, 2011b). This band lineup is also implied in the band structures.…”

Section: (Nm) a (Nm)mentioning

confidence: 99%

“…However, the Si/Ge core-shell and the pure Si and Ge nanowires with H passivation along the [110] direction demonstrate a direct band gap at  (Beckman et al, 2006;Arantes & Fazzio, 2007;Medaboina et al, 2007;L. Yang et al, 2008, Peng & Logan, 2010, Peng et al, 2011b.…”

Section: (Nm) a (Nm)mentioning

confidence: 99%

“…Compared to pure Si and Ge wires, the core-shell structure has some greater properties. For instance, a better conductance and higher mobility of charge carries can be obtained, due to the conduction and valence band offsets in the core-shell nanowires (Kagimura et al, 2007;Goldthorpe et al, 2008;L. Yang et al, 2008).…”

Section: Introductionmentioning

confidence: 99%

“…In these calculations, the band gap and near-gap electronic states are particularly investigated as a function of hetero-composition. For example, Wang's group (Musin & Wang, 2005 reported the band gap of Si/Ge core-shell nanowires as a function of composition for wires with diameter up to 3 nm; Migas & Borisenko (Migas & Borisenko, 2007) studied the electronic properties of Si/Ge core-shell nanowire along the [100] direction with a diameter of 1.5 nm; Yang et al (L. Yang et al, 2008) investigated the near-gap electronic states with the core and shell regions along [110] and [111] directions with diameter up to 4 nm. Our group (Peng & Logan, 2010;Peng et al, 2011b), in particular, explored the effect of intrinsic and external strain on the band structures of Si/Ge core-shell nanowires along the [110] direction with the wire diameter up to 5 nm.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, Varahramyan and co-worker (Varahramyan et al, 2009) used ultrahigh vacuum chemical vapor deposition to grow Si x Ge 1-x epitaxial core-shell nanowires, and the Si/Ge shell content can be tuned to enable radial band and strain engineering in these heterostructures. In addition to the experimental studies, several theoretical calculations were performed to study the quantum confinement effect in Si/Ge core-shell nanowires (Amato et al, 2009;Musin & Wang, 2005L. Yang et al, 2008).…”

Section: Introductionmentioning

confidence: 99%

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Section: (Nm) a (Nm)mentioning

confidence: 99%

Section: (Nm) a (Nm)mentioning

confidence: 99%

Section: Introductionmentioning

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Section: Introductionmentioning

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2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling‐down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary–metal–oxide semiconductor in order to summarize obstacles to the goal of developing high‐density and low‐power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large‐scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of “more than Moore” research.

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Charge Separation in Wurtzite/Zinc‐Blende Heterojunction GaN Nanowires

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The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.

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Quantum confinement effect in Si/Ge core-shell nanowires: First-principles calculations

Cited by 76 publications

References 24 publications

First Principles Study of Si/Ge Core-Shell Nanowires ---- Structural and Electronic Properties

First Principles Study of Si/Ge Core-Shell Nanowires ---- Structural and Electronic Properties

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

Charge Separation in Wurtzite/Zinc‐Blende Heterojunction GaN Nanowires

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