Quantum confinement effect in nanohills formed on a surface of Ge by laser radiation

Medvíd, A.; Dmytruk, I. M.; Onufrijevs, Pāvels; Pundyk, Iryna

doi:10.1002/pssc.200675477

Cited by 22 publications

(25 citation statements)

References 13 publications

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“…(15). It is interesting to examine the dependence of electron energy structure on the shape of QD, particularly the alternation of the spectrum when shape of the particle changes from the sharp to the blunt form.…”

Section: Pyramid-like Qd Model and Main Equationsmentioning

confidence: 99%

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The Analytical Study of Electronic and Optical Properties of Pyramid-Like and Cone-Like Quantum Dots

Lozovski¹,

Piatnytsia²

2011

j comput theor nanosci

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The analytical expressions for electron wave function of pyramid-like and cone-like quantum dot located on the semiconductor surface are obtained. The energy spectrum of electron states in the quantum dots is calculated. The dependence of energy levels on the angle at the vertex of an edge-shaped nanodots is studied. The distribution of electron density for different electronic states is calculated for each case. The dependence of function of linear response to the external field on vertex angle is calculated in the frame of proposed approach. The local field distributions for both pyramid-and cone-like particles are calculated.

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Section: Pyramid-like Qd Model and Main Equationsmentioning

confidence: 99%

“…13 Nowadays the technique of obtaining the cone-shaped particles at the surface of Si by scanning of the surface with laser beam of high intensity were reported in Refs. [14][15]. As a result, the different types of cone-shaped particles were obtained-as needle-like (with small vertex angle), as nano-hills (with large vertex angle).…”

Section: Introductionmentioning

confidence: 98%

The Analytical Study of Electronic and Optical Properties of Pyramid-Like and Cone-Like Quantum Dots

Lozovski¹,

Piatnytsia²

2011

j comput theor nanosci

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“…Compressive mechanical stress is a result thermogradient effect [3] (enrichment of a near surface layer by interstitial atoms). However according to our researches [13] growth of nanohills on a semiconductor surface stimulate by laser irradiation is a consequence of a mechanical stress relaxation. So "blue shift" of А 0 Х band should be greater at the smaller sizes of nanohills and therefore at lower intensity of a laser irradiation.…”

mentioning

confidence: 99%

Exciton quantum confinement effect in nanostructures formed by laser radiation on the surface of CdZnTe ternary compound

Medvíd

Mychko

Strilchyk

et al. 2008

Phys. Status Solidi (c)

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Self‐organizing structures of nanometer size are observed on the surface of CdZnTe crystal irradiated by strongly absorbed Nd:YAG laser radiation (LR) at intensities within 4–12 MW/cm2. The effect of exciton quantum confinement manifested by a shift to higher energies of the A0,X exciton band of the photo‐luminescent spectrum is present in structures of 10–15 nm in diameter at the top of nano‐hills. A graded band gap structure with optical window is formed at the top of nano‐hills. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Our previous investigations have shown possibility to form cone-like nanostructures on a surface of elementary semiconductors – Ge [8], Si [9], and solid solutions SiGe [10] and CdZnTe [11]. According to our investigation, nanocone formation mechanism is characterised by two stages for SiGe and CdZnTe solid solutions [6].…”

Section: Introductionmentioning

confidence: 67%

Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation

et al. 2012

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In this work, we study the mechanism of nanocone formation on a surface of elementary semiconductors by Nd:YAG laser radiation. Our previous investigations of SiGe and CdZnTe solid solutions have shown that nanocone formation mechanism is characterized by two stages. The first stage is characterized by formation of heterostructure, for example, Ge/Si heterostructure from SiGe solid solutions, and the second stage is characterized by formation of nanocones by mechanical plastic deformation of the compressed Ge layer on Si due to mismatch of Si and Ge crystalline lattices. The mechanism of nanocone formation for elementary semiconductors is not clear until now. Therefore, the main goal of our investigations is to study the stages of nanocone formation in elementary semiconductors. A new mechanism of p-n junction formation by laser radiation in the elementary semiconductor as a first stage of nanocone formation is proposed. We explain this effect by the following way: p-n junction is formed by generation and redistribution of intrinsic point defects in temperature gradient field – the thermogradient effect, which is caused by strongly absorbed laser radiation. According to the thermogradient effect, interstitial atoms drift towards the irradiated surface, but vacancies drift to the opposite direction – in the bulk of semiconductor. Since interstitials in Ge crystal are of n-type and vacancies are known to be of p-type, a n-p junction is formed. The mechanism is confirmed by the appearance of diode-like current–voltage characteristics after i-Ge irradiation crystal by laser radiation. The mechanism in Si is confirmed by conductivity type inversion and increased microhardness of Si crystal. The second stage of nanocone formation is laser heating up of top layer enriched by interstitial atoms with its further plastic deformation due to compressive stress caused by interstitials in the top layer and vacancies in the buried layer.

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Quantum confinement effect in nanohills formed on a surface of Ge by laser radiation

Cited by 22 publications

References 13 publications

The Analytical Study of Electronic and Optical Properties of Pyramid-Like and Cone-Like Quantum Dots

The Analytical Study of Electronic and Optical Properties of Pyramid-Like and Cone-Like Quantum Dots

Exciton quantum confinement effect in nanostructures formed by laser radiation on the surface of CdZnTe ternary compound

Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation

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