Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Grown on (111)A GaAs

Abstract

In0.2Ga0.8As/GaAs strained quantum wells (SQWs) were grown on GaAs (111)A just-oriented, 1° off and 5° off toward [110]- and [001]-oriented substrates. Dependence of strain relaxation on substrate orientation was studied by photoluminescence (PL) spectroscopy. Samples grown on GaAs (111)A 5° off toward [001]-oriented substrates showed the best optical characteristics and this substrate orientation was chosen for making p-i-n diodes. The PL spectrum shows the influence of a built-in electric field due to the piezoelectric effect. The blueshift of PL peaks with applied bias was demonstrated in a p-i-n structure. The PL peak corresponding to a 10 nm SQW blueshifted as much as 24 meV with only 1.2 V applied reverse bias.

Piezoelectric Effects on Optical Properties and Carrier Kinetics of InAs/GaAs(N11) Self-Assembled Quantum Dots

“…A blue-shift of the PL band with increasing power density is observed in most of the samples with only minor modifications of the PL lineshape clearly denoting a photoinduced screening of the internal electric field [2,7]. The measured PL blue-shifts versus the excitation power density for three different samples, with 1.8 ML of InAs coverage, is shown in the inset of Fig.…”

“…The symmetry of the strain, which depends on the substrate orientation, determines the direction of the polarization vector. The role of piezoelectric effect on the optical properties of InGaAs/GaAs quantum wells grown on high-Miller index substrates has been extensively studied in the last few years [6][7][8]. On the contrary, there is a lack of information on piezoelectric effects in self-assembled InAs quantum dots grown on (N11) high Miller index GaAs substrates.…”

Исследование морфологии поверхности, электрофизических характеристик и спектров фотолюминесценции эпитаксиальных плёнок GaAs на подложках GaAs (110)

“…[1]. Кроме того, структуры на подложках (111)А и (110) обладают встроенным пьезоэлектрическим полем, направленным вертикально или в плоскости роста [2][3][4]. Это обстоятельство оказывает влияние не только на механизм и особенности эпитаксиального роста, но и на фундаментальные свойства полученных структур [1].…”

Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies

“…The polarization charge density induced by the strain at the high index interfaces modifies the energy band structure and renormalizes the exciton levels by shifting the resonance to lower energy through the quantum confined Stark effect [2][3][4]. Strained InGaAs based quantum wells (QWs) and quantum wires (QWRs) thus become quite interesting for the design of new structures exploiting the tailored strength and orientation of the piezoelectric field [5].…”