Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

Abstract

The effect of an externally applied lateral electric field upon an exciton confined in a single InGaN quantum dot is studied using microphotoluminescence spectroscopy. The quantum-confined Stark effect causes a shift in the exciton energy of more than 5 meV, accompanied by a reduction in the exciton oscillator strength. The shift has both linear and quadratic terms as a function of the applied field.

Three methods for the growth of InGaN nanostructures by MOVPE

“…We have yet to achieve higher nanostructure densities using this method, making it perhaps less appropriate to the construction of LEDs than to the study of single nitride quantum dots, in which context samples grown in this way have proved extremely useful [4,5]. Looking at Fig.…”

Built-in field reduction in InGaN/GaN quantum dot molecules

“…However, the analysis of coupled InGaAs QDs shows that, due to strain relaxation in the structure, the In composition of the upper QD is higher than in the lower one. 11 Since InGaN QD structures with 20%-25% In have been reported in the literature, 12 we assume an In content of 20% in the lower dot and 25% in the upper dot. Based on the experimental data in Ref.…”

Progress in the optical studies of single InGaN/GaN quantum dots

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