Quantum Coherent Multielectron Processes in an Atomic Scale Contact

Peters, P.J.M. (Piet); Xu, Fei; Kaasbjerg, Kristen; Rastelli, Gianluca; Belzig, Wolfgang; Berndt, Richard

doi:10.1103/physrevlett.119.066803

Cited by 36 publications

(58 citation statements)

References 56 publications

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“…Figure 1C shows the light emission spectra (ℏw > ℏwexc ≈ 1.58 eV) measured from a Au junction. In the EL case, above-threshold emission can be generated via multi-electron interactions in the low current limit (~100 nA) 19 , and hot carrier recombination in the high current limit (~100 $%) 24 . For PL at zero bias, in addition to the hot carrier 26 or intraband transition 36 induced photoluminescence, tunneling electrons can also undergo a Raman process (electronic Raman scattering, ERS) before emitting a photon with a different energy 30,31 .…”

Section: Resultsmentioning

confidence: 99%

Thousand-fold Increase in Plasmonic Light Emission via Combined Electronic and Optical Excitations

et al. 2021

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Surface plasmon enhanced processes and hot-carrier dynamics in plasmonic nanostructures are of great fundamental interest to reveal light-matter interactions at the nanoscale. Using plasmonic tunnel junctions as a platform supporting both electrically-and optically excited localized surface plasmons, we report a much greater (over 1000×) plasmonic light emission at upconverted photon energies under combined electro-optical excitation, compared with electrical or optical excitation separately. Two mechanisms compatible with the form of the observed spectra are interactions of plasmon-induced hot carriers and electronic anti-Stokes Raman scattering. Our measurement results are in excellent agreement with a theoretical model combining electro-optical generation of hot carriers through non-radiative plasmon excitation and hot-carrier relaxation. We also discuss the challenge of distinguishing relative contributions of hot carrier emission and the anti-Stokes electronic Raman process. This observed increase in above-threshold emission in plasmonic systems may open avenues in on-chip nanophotonic switching and hot carrier photocatalysis.

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Section: Resultsmentioning

confidence: 99%

Thousand-fold Increase in Plasmonic Light Emission via Combined Electronic and Optical Excitations

et al. 2021

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“…It is experimentally found that light emission occurs not only at energy lower than the dc bias but also at the overbias energy Ω > eV [37]. This overbias emission is successfully explained by two-electron and even multi-electron processes [40,42,43] emitting a single photon. However, light emission with time-dependent drive has not been investigated so far.…”

Section: Modelmentioning

confidence: 91%

Non-classical current noise and light emission of an ac-driven tunnel junction

2020

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The non-symmetrized current noise is crucial for the analysis of light emission in nanojunctions. The latter represent non-classical photon emitters whose description requires a full quantum approach. It was found experimentally that light emission can occur with a photon energy exceeding the applied dc voltage, which intuitively should be forbidden due to the Pauli principle. This overbias light emission cannot be described by the single-electron physics, but can be explained by two-electron or even three-electron processes, correlated by a local resonant mode in analogy to the well-known dynamical Coulomb blockade (DCB). Here, we obtain the non-symmetrized noise for junctions driven by an arbitrarily shaped periodic voltage. We find that when the junction is driven, the overbias light emission exhibits intriguingly different features compared to the dc case. In addition to kinks at multiples of the bias voltage, side kinks appear at integer multiples of the ac driving frequency. Our work generalizes the DCB theory of light emission to driven tunnel junctions and opens the avenue for engineered quantum light sources, which can be tuned purely by applied voltages.

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“…For completeness we would like to emphasize thatespecially in the high conductivity regime-alternative mechanisms such as hot-electron emission [76][77][78] and inelastic processes involving more than one electron [79][80][81][82][83] play an important role in the light emission from tunnel junctions . Recently it was also suggested that a ballistic nanoconstriction may yield a higher emission efficiency than the more widely studied tunneling gaps [84].…”

Section: Scope and Overviewmentioning

confidence: 99%

Optical antennas driven by quantum tunneling: a key issues review

Parzefall

Novotny

2019

Rep. Prog. Phys.

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Analogous to radio-and microwave antennas, optical nanoantennas are devices that receive and emit radiation at optical frequencies. Until recently, the realization of electrically driven optical antennas was an outstanding challenge in nanophotonics. In this review we discuss and analyze recent reports in which quantum tunneling-specifically inelastic electron tunneling-is harnessed as a means to convert electrical energy into photons, mediated by optical antennas. To aid this analysis we introduce the fundamentals of optical antennas and inelastic electron tunneling. Our discussion is focused on recent progress in the field and on future directions and opportunities. :1910.01224v1 [cond-mat.mes-hall] CONTENTS arXiv

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Quantum Coherent Multielectron Processes in an Atomic Scale Contact

Cited by 36 publications

References 56 publications

Thousand-fold Increase in Plasmonic Light Emission via Combined Electronic and Optical Excitations

Thousand-fold Increase in Plasmonic Light Emission via Combined Electronic and Optical Excitations

Non-classical current noise and light emission of an ac-driven tunnel junction

Optical antennas driven by quantum tunneling: a key issues review

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