Quantum capture of electrons and intra-dot relaxation by means of Auger processes in quantum dots

Vartanian, Arshak L.; Asatryan, Anna L.; Vardanyan, K.A.; Kirakosyan, A.A.

doi:10.1016/j.physe.2009.11.133

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…The “re‐emergence” of efficient THz signal conversion as the pump energy approaches the corresponding excited‐state levels of the implanted QDs is perhaps the most significant novelty demonstrated here. The time‐domain analysis presented in this work also confirms ultrafast carrier recombination behaviour theoretically predicted earlier , where, among other effects, increasingly shortened carrier recombination times from higher‐occupancy (excited‐state) energy levels of implanted QDs with increasing carrier density, via phonon‐assisted Auger interactions has been predicted. Also, slower GS recombination times can explain the absence of THz signal at GS pump energies, where most photoluminescence, which is not as lifetime dependent occurs.…”

Section: Thz Generation In Qd Based Devicessupporting

confidence: 89%

Quantum dot materials for terahertz generation applications

Leyman

Gorodetsky

Bazieva

et al. 2016

Laser & Photonics Reviews

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Compact and tunable semiconductor terahertz sources providing direct electrical control, efficient operation at room temperatures and device integration opportunities are of great interest at the present time. One of the most well-established techniques for terahertz generation utilises photoconductive antennas driven by ultrafast pulsed or dualwavelength continuous wave laser systems, though some limitations, such as confined optical wavelength pumping range and thermal breakdown, still exist. The use of quantum dotbased semiconductor materials, having unique carrier dynamics and material properties, can help to overcome limitations and enable efficient optical-to-terahertz signal conversion at room temperatures. Here we discuss the construction of novel and versatile terahertz transceiver systems based on quantum dot semiconductor devices. Configurable, energy-dependent optical and electronic characteristics of quantum-dot-based semiconductors are described, and the resonant response to optical pump wavelength is revealed. Terahertz signal generation and detection at energies that resonantly excite only the implanted quantum dots opens the potential for using compact quantum dot-based semiconductor lasers as pump sources. Proof-ofconcept experiments are demonstrated here that show quantum dot-based samples to have higher optical pump damage thresholds and reduced carrier lifetime with increasing pump power.

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Section: Thz Generation In Qd Based Devicessupporting

confidence: 89%

Quantum dot materials for terahertz generation applications

Leyman

Gorodetsky

Bazieva

et al. 2016

Laser & Photonics Reviews

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show abstract

“…Another approach is multiple-exciton generation (MEG), where one photon can generate multiple carriers. 12,13) Figure 1(b) shows the scheme of MEG. A higher-energy photon excites an electron to a higher energy level in the conduction band.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study on Effect of SiC Crystal Structure on Carrier Transfer in Quantum Dot Solar Cells

Hirose

Yamashita

Nagumo

et al. 2011

Jpn. J. Appl. Phys.

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Quantum dot (QD) solar cells are proposed as high-efficiency solar cells. However, their reported conversion efficiencies have been lower than half of the ideal value. To improve their efficiency, the optimization of their cell structure in terms of various parameters, e.g., dot size, interdot distance, type of materials, and QD/bulk interface structure, is necessary. In this paper, we focused on the most important factor for the improvement in the conversion efficiency of Si/SiC type QD solar cells and investigated the effect of the atomistic structure of the QD/bulk interface on carrier transfer by tight-binding simulation. We constructed models of Si/SiC systems and analyzed the effect of QD/bulk interface defects on their electronic structure and carrier transfer properties. It was suggested that electrons trapped at the QD/bulk interface and the type of SiC crystal structure affect electron transfer.

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The nondestructive observation of correlation between optical characteristic and morphologic feature within capped ZnCdSe/ZnSe quantum dots system

Lee

Shiau

2014

Physica E: Low-dimensional Systems and Nanostructures

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Quantum capture of electrons and intra-dot relaxation by means of Auger processes in quantum dots

Cited by 5 publications

References 9 publications

Quantum dot materials for terahertz generation applications

Quantum dot materials for terahertz generation applications

Theoretical Study on Effect of SiC Crystal Structure on Carrier Transfer in Quantum Dot Solar Cells

The nondestructive observation of correlation between optical characteristic and morphologic feature within capped ZnCdSe/ZnSe quantum dots system

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