Quantum capture area in layered quantum well structures

Shulika, Oleksiy V.; Safonov, I.M.; Sukhoivanov, Igor A.; Лысак, В.В.

doi:10.1016/j.mejo.2005.02.103

Cited by 9 publications

(3 citation statements)

References 11 publications

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“…In the case of barrier pump carriers should be captured from the reservoir to QWs before tunneling or/and recombination. We examined the carrier capture time [9], [10], Fig.8, and found that capture time for these structures is substantially smaller than Auger recombination time. This is expectable result for structures with not very wide reservoir and without wide barriers, because in such structures overlap of carriers' wave functions is high.…”

Section: Asymmetric Multiple Quantum Wellsmentioning

confidence: 99%

Band engineering of complex asymmetric multiple quantum wells for optically pumped semiconductor disk lasers

Shulika

Sukhoivanov

Klymenko

et al. 2010

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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Asymmetric multiple quantum well active regions for optically-pumped semiconductor disk lasers (OPSDLs) are designed employing wave function engineering within GaAs/AlGaAs material system, which provide simultaneously good electronic confinement, large gain and effective carrier transport. Experimental investigation has shown that such an approach gives record values of the conversion efficiency among OPSDLs and provides high values of the output power.

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Section: Asymmetric Multiple Quantum Wellsmentioning

confidence: 99%

Band engineering of complex asymmetric multiple quantum wells for optically pumped semiconductor disk lasers

Shulika

Sukhoivanov

Klymenko

et al. 2010

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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“…While in the second case only carriers located in quantum layer are allowed to be captured into QW. Solution resolving this vagueness has been found in [9] via new general definition of the capture area in lowdimensional heterostructures. Authors have introduced capture area from the first principles, not as a geometrical parameter of a heterosystem, but as a fundamental characteristic of a low-dimensional heterostructure followed from its quantum nature.…”

Section: A Quantum Capturementioning

confidence: 99%

Simulation of Active Regions of Semiconductor Lasers and Optical Amplifiers based on Quantum Wells

Shulika¹

2007

2007 International Workshop on Optoelectronic Physics and Technology

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Simulation of band structure, potential profile and carrier transport in QWs are highlighted. Anisotropy of the valence band on the density of states and gain spectra of QWs is addressed. It has been shown that axial approximation leads to underestimated gain. Errors can amount to 18.8%. Results of selfconsistent computation of energy band diagram for compositionally asymmetric multiple quantum-well structure are presented. Flat-band approximation of quantum-well potential profile is examined. Quantum capture and tunneling in SQWs and MQWs are considered. It is shown that tunneling do play significant role in high-speed properties of (A)MQW SOA and prediction of SOA gain spectrum. Is is shown that quantum capture area is a function of temperature and injection level, and consequently is governed by composition and structure of a QW-device and its operating point.

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“…Nowadays layered photonic structures (LPSs) are key of optoelectronic and microwave devices such as, phased-array antennas, microcavities and mirrors [1,2], filters of xWDM systems [3], waveguide structures, photodetectors, sensors and others. In case of active devices the layered structures are usually used in form of superlattices [4][5][6], multiple quantum wells [7,8] and asymmetric multiple quantum wells [9]. Different kinds of materials are used today for design LPSs, such as linear and nonlinear [3,10] dielectric materials, anisotropic or bi-anisotropic materials [11], chiral media [12], metamaterials [13], etc.…”

Section: Introductionmentioning

confidence: 99%