2016
DOI: 10.1142/s0219581x16500095
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Quantum Capacitance of Nanoplates in Magnetic Field

Abstract: We study the quantum capacitance [Formula: see text] in the objects with completely discrete structure of electron states as a result of both dimensional quantization and applied magnetic field. The capacitance is analyzed in such objects as nanoplates of metal, semiconductor and semimetal. Factors which define the form of the dependence of [Formula: see text] on the position of the Fermi level or potential bias, and magnetic field, are analyzed.

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Cited by 2 publications
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“…At the same time, and more interestingly, it changes the frequency genesis at the low-frequency region ReZ(ω) to the opposite -monotonically increasing. This low-frequency behavior of ReZ(ω) may be related to the quantum capacitance (C q ) caused by the discretization of the energy spectrum and the finite tunneling times [33].…”
Section: Resultsmentioning
confidence: 99%
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“…At the same time, and more interestingly, it changes the frequency genesis at the low-frequency region ReZ(ω) to the opposite -monotonically increasing. This low-frequency behavior of ReZ(ω) may be related to the quantum capacitance (C q ) caused by the discretization of the energy spectrum and the finite tunneling times [33].…”
Section: Resultsmentioning
confidence: 99%
“…The magnetic field which is normally applied to the plate leads to additional quantization of band states and of its plane [33]. It is interesting to note an important practical aspect of quantum capacitance (C q ) generation by the permanent magnetic field.…”
Section: Resultsmentioning
confidence: 99%