Quantum anomalous Hall effect with a permanent magnet defines a quantum resistance standard

Okazaki, Yoshiaki; Oe, Takehiko; Kawamura, Minoru; Yoshimi, Ryutaro; Nakamura, Shuji; Takada, Shintaro; Mogi, Masataka; Takahashi, Kei; Tsukazaki, Atsushi; Kawasaki, Masashi; Tokura, Y.; Kaneko, Nobu‐Hisa

doi:10.1038/s41567-021-01424-8

Cited by 40 publications

(31 citation statements)

References 36 publications

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“…We note that systems with C 3z symmetry, such as doped Bi 2 Se 3 [17] do not exhibit this correction due to the symmetry restriction. Our results might be relevant in understanding why experiments on systems with rotational symmetries observe a much more precisely quantized QAHE [18,55]. Related to that, the reasoning presented here raises the question whether third or even higher order corrections are non-vanishing even if a QAH system has inversion and C 3 symmetry.…”

supporting

confidence: 62%

General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect

Kaplan

Holder

Yan

2022

Preprint

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Can a generic magnetic insulator exhibit a Hall current? The quantum anomalous Hall effect (QAHE) is one example of an insulating bulk carrying a quantized Hall conductivity and other insulators (with zero Chern number) present zero Hall conductance in the linear response regime. Here, we find that a general magnetic insulator possesses a nonlinear Hall conductivity quadratic to the electric field if the system breaks inversion symmetry. This conductivity originates from an induced orbital magnetization due to virtual interband transitions. We identify three contributions to the wavepacket motion, a velocity shift, a positional shift, and a Berry curvature renormalization. In contrast to the crystalline solid, we find that this nonlinear Hall conductivity vanishes for Landau levels of a 2D electron gas, indicating a fundamental difference between the QAHE and the Integer quantum Hall effect.

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supporting

confidence: 62%

General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect

Kaplan

Holder

Yan

2022

Preprint

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“…Indeed, recently QAHE was realized by Okazaki et al by using topological insulator (Bi, Sb)Te doped with chromium and polarization of the magnetic ions was achieved by neodymium permanent magnet. [ 167 ] The applied magnetic field was much smaller than in the case of the quantum Hall effect.…”

Section: Topological Crystalline Insulatorsmentioning

confidence: 99%

Magnetic Interactions in IV–VI Diluted Magnetic Semiconductors

Górska

Kilański

Łusakowski

2022

Physica Status Solidi (b)

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Diluted magnetic semiconductors (DMS) are interesting because of the interplay between the electronic and magnetic subsystems. Selected magnetic properties of IV–VI DMS are described, looking at the similarities and differences between magnetic properties of II–VI, IV–VI, and III–V DMS. The influence of the crystalline and electronic structure of the material on its magnetic properties is focused on, especially on the exchange interactions among magnetic ions. Methods of determination of the exchange parameters are described by using different experimental techniques, such as measurements of magnetic susceptibility, magnetization, and specific heat. The development in the material technology from bulk crystals to thin films and nanostructures is followed.

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“…For the current stage, quantum hall devices still cannot commercialize yet, and it is still hard to apply this tech in common conditions. Such QAH systems like MnBi2Te4, twisted bilayer graphene, and MoTe2/WSe2 heterobilayers have not yet reached study as resistance standards, they represent distinct pathways to realizing a QAH platform [27]. Similarly in the other QHEs, different systems present different phenomenon and results.…”

Section: Limitation and Future Outlooksmentioning

confidence: 99%

The Recent Progress and the State-of-Art Applications for Different Types of Hall Effect

Zhao

Wang³

et al. 2022

J. Phys.: Conf. Ser.

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Contemporarily, plenty of important breakthroughs in the systematic theoretical research of Hall effect as well as a great number of applications of Hall effect have taken place. In this paper, we elucidate the theoretical development and application of the Hall effect. To be specific, the category of Hall effect and recent progress in this research field. According to the analysis, the study of Hall effect was a complex system and still have potential to develop further on theories or applications. In addition, the scheme to effectively apply Quantum Anomalous Hall effect on high-performance electronic devices and the path to commercially manufacture them should be followed with interest are detailly demonstrated. These results shed light on guiding further exploration of emerging subject, e.g., the 3D Hall effect and Valley Hall effect and their corresponding applications.

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Quantum anomalous Hall effect with a permanent magnet defines a quantum resistance standard

Cited by 40 publications

References 36 publications

General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect

General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect

Magnetic Interactions in IV–VI Diluted Magnetic Semiconductors

The Recent Progress and the State-of-Art Applications for Different Types of Hall Effect

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