Quantized magnetoresistance in atomic-size contacts

Sokolov, Andrei; Zhang, Chunjuan; Tsymbal, Evgeny Y.; Redepenning, Jody; Doudin, B.

doi:10.1038/nnano.2007.36

Cited by 87 publications

(85 citation statements)

References 28 publications

(23 reference statements)

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“…Very large AMR has been reported in planar tunnel junctions ͓tunneling anisotropic magnetoresistance ͑TAMR͔͒ with a variety of electrode and barrier materials. [3][4][5][6][7][8] Enhanced AMR has also been observed in atomic sized contacts, both in the tunnel regime ͑TAMR͒ and in the contact ͑or ballistic 13 ͒ regime ͓ballistic anisotropic magnetoresistance ͑BAMR͔͒, 14 for Py, 9 Fe, 10 Ni, 11 and Co. 12 Additionally, GaMnAs islands in the Coulomb blockade regime show electrically tunable AMR. 15 Thus, a wide range of nanostructures made from different materials display enhanced AMR.…”

Section: Introductionmentioning

confidence: 99%

“…In the scattering-free case of perfect onedimensional ͑1D͒ chains, T͑⑀ F ͒ is simply given by the number of bands at the Fermi energy N͑⑀ F ͒. Because of the SOC, N͑⑀ F ͒ for ferromagnetic 1D transition metal chains 10,12,14,17 depends on the angle between the chain axis and the magnetization, and this leads naturally to stepwise G͑ ͒ curves.…”

Section: Introductionmentioning

confidence: 99%

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Anisotropic magnetoresistance in nanocontacts

2008

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We present ab initio calculations of the evolution of anisotropic magnetoresistance ͑AMR͒ in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In systems without localized states, such as chemically pure break junctions, large AMR only occurs if the orbital polarization of the current is large, regardless of the anisotropy of the density of states. In systems that display localized states close to the Fermi energy, such as a single electron transistor with ferromagnetic electrodes, large AMR is related to the variation of the Fermi energy as a function of the magnetization direction.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Anisotropic magnetoresistance in nanocontacts

2008

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“…Usually, a splitting of these maxima would have been expected because of the so--called ballistic magnetoresistance (BMR) [64,65], where the number of fully transmitted conductance channels changes upon applying a magnetic field. In particular, lifting the spin degeneracy modifies the number of modes for spin-up and spin-down subbands, which manifests itself in a magnetic field dependent opening and closing of discrete conductance channels of the contact leading to discrete conductance steps in the order of e 2 /h [66,67]. Surprisingly, these preferred conductance values did not change noticeably when a magnetic field (B = 5 T) was applied during opening and closing the contact and no preferred conductance at half-integer values of G 0 are observed.…”

Section: Ferromagnetic (Co) Single-atom Contactsmentioning

confidence: 99%

Electron Transport in Magnetic Quantum Point Contacts

et al. 2012

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In recent years, the fabrication of novel building blocks for quantum computation-and spintronics devices gained significant attention. The ultimate goal in terms of miniaturization is the creation of single-atom functional elements. Practically, quantum point contacts are frequently used as model systems to study the fundamental electronic transport properties of such mesoscopic systems. A quantum point contact is characterised by a narrow constriction coupling two larger electron reservoirs. In the absence of a magnetic field, the conductance of these quantum point contacts is quantised in multiples of 2e 2 /h, the so-called conductance quantum (G 0 ). However, in the presence of magnetic fields the increased spin-degeneracy often gives rise to a deviation from the idealized behaviour and therefore leads to a change in the characteristic conductance of the quantum point contact. Herein, we illustrate the complex magnetotransport characteristics in quantum point contacts and magnetic heterojunctions. The theoretical framework and experimental concepts are discussed briefly together with the experimental results as well as potential applications.

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“…Bimetallic atomic wires are the most promising objects for construction of new nanoelectronics and spintronics devices [1,2]. Bimetallic atomic nanowires possess the unique magnetic [3,4,8,11] and conductive [2,5] properties, i.e.…”

Section: Introductionmentioning

confidence: 99%

Spin-filter state of Au-Co nanowires

2018

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Abstract. Our theoretical study reveals the dependence of quantum conductance of Au-Co nanowires on their atomic structure. The results show the emergence of spin-filter state in one-dimensional Au-Co bimetallic nanowires. We found the existence of two transmission regime in Au-Co nanowires with low and high conductivity 1G 0 and 2G 0 for "zig-zag" and linear nanowire correspondingly. The study of transmission spectra of Au-Co nanowires reveals the control capability of spin transport regime by changing of bias voltage between bulk electrodes.

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Quantized magnetoresistance in atomic-size contacts

Cited by 87 publications

References 28 publications

Anisotropic magnetoresistance in nanocontacts

Anisotropic magnetoresistance in nanocontacts

Electron Transport in Magnetic Quantum Point Contacts

Spin-filter state of Au-Co nanowires

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