2019
DOI: 10.1021/acs.nanolett.8b04904
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Quantized Electronic Doping towards Atomically Controlled “Charge-Engineered” Semiconductor Nanocrystals

Abstract: † These authors contributed equally to this work. 'Charge engineering' of semiconductor nanocrystals (NCs) through so-called electronic impurity doping is a long-lasting challenge in colloidal chemistry and holds promise for groundbreaking advancements in many optoelectronic, photonic and spin-based nanotechnologies. To date, our knowledge is limited to a few paradigmatic studies on a small number of model compounds and doping conditions, with important electronic dopants still unexplored in nanoscale systems.… Show more

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Cited by 18 publications
(29 citation statements)
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References 83 publications
(213 reference statements)
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“…Doping with Au + drastically modifies the PL spectrum and dynamics of the NCs, with the suppression of the band‐edge PL in favor of a broad, long‐lived emission centered at ≈670 nm (1.85 eV). In agreement with the mechanistic scheme drawn in Figure 1D and in the inset of Figure 2B, as well as with previous reports on NCs doped with group 11 metals, [ 36,37 ] this intragap emission, hereafter referred to as Au‐PL, is ascribed to the radiative decay of the CB electron in the d‐states of gold following the transient oxidation of Au + to Au 2+ upon ultrafast localization of the VB hole according to the reaction Au + + h VB → Au 2+ .…”
Section: Figuresupporting
confidence: 92%
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“…Doping with Au + drastically modifies the PL spectrum and dynamics of the NCs, with the suppression of the band‐edge PL in favor of a broad, long‐lived emission centered at ≈670 nm (1.85 eV). In agreement with the mechanistic scheme drawn in Figure 1D and in the inset of Figure 2B, as well as with previous reports on NCs doped with group 11 metals, [ 36,37 ] this intragap emission, hereafter referred to as Au‐PL, is ascribed to the radiative decay of the CB electron in the d‐states of gold following the transient oxidation of Au + to Au 2+ upon ultrafast localization of the VB hole according to the reaction Au + + h VB → Au 2+ .…”
Section: Figuresupporting
confidence: 92%
“…In this work, we realize this regime for the first time by exploiting the ultrafast hole dynamics in CdSe NCs electronically doped with Au + cations. In these systems, similar to Cu + ‐ or Ag + ‐doped NCs, [ 36,37 ] the d‐electrons of Au + impurities (in 5d 10 electronic configuration) introduce intragap hole acceptor states at Δ E VB‐Au ≈ 0.6 eV above the VB maximum that localize the photohole in ≈1–2 ps. [ 36 ] This gives rise to a bound exciton with the delocalized CB electron, whose radiative decay yields the characteristic long‐lived, Stokes‐shifted photoluminescence (PL).…”
Section: Figurementioning
confidence: 99%
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