2019
DOI: 10.1103/physrevb.99.245151
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Quantization of fractional corner charge in Cn -symmetric higher-order topological crystalline insulators

Abstract: In the presence of crystalline symmetries, certain topological insulators present a filling anomaly: a mismatch between the number of electrons in an energy band and the number of electrons required for charge neutrality. In this paper, we show that a filling anomaly can arise when corners are introduced in Cn-symmetric crystalline insulators with vanishing polarization, having as consequence the existence of corner-localized charges quantized in multiples of e n . We characterize the existence of this charge … Show more

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Cited by 626 publications
(542 citation statements)
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References 84 publications
(75 reference statements)
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“…A paradigmatic example is the family of topological insulators which manifest quantized dipole moments in their bulk and charge fractionalization at their boundaries [1][2][3], epitomized by the inversion-symmetric onedimensional Su-Schieffer-Hegger model [4]. This property of boundary charge fractionalization has recently been generalized through the discovery of higher-order topological insulators (HOTIs) whose topology is solely protected by crystalline symmetries and which can host corner fractional charges in 2D and 3D [5][6][7][8][9][10][11][12][13][14].…”
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confidence: 99%
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“…A paradigmatic example is the family of topological insulators which manifest quantized dipole moments in their bulk and charge fractionalization at their boundaries [1][2][3], epitomized by the inversion-symmetric onedimensional Su-Schieffer-Hegger model [4]. This property of boundary charge fractionalization has recently been generalized through the discovery of higher-order topological insulators (HOTIs) whose topology is solely protected by crystalline symmetries and which can host corner fractional charges in 2D and 3D [5][6][7][8][9][10][11][12][13][14].…”
mentioning
confidence: 99%
“…This model has been recently studied in the context of charge fractionalization in higher-order topological crystalline insulators [11]. In the topological phase, the Wannier centers in all the bands localize at the maximal Wyckoff position 1b (corner of the unit cell), while in the trivial phase the Wannier centers in all the bands are localized at the maximal Wyckoff position 1a (center of the unit cell).…”
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confidence: 99%
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“…With increasing strength of gain and loss, the effective anisotropy of the photonic graphene grows. Correspondingly, the two Dirac cones (with opposite Berry phases) approach each other and annihilate at high-symmetry point, leaving a gapped insulator phase, which tends out to be a photonic Wannier-type HOTI phase [43,51].…”
Section: Discussionmentioning
confidence: 99%
“…In Sec. III, we study how the band structure changes with respect to increasing gain/loss strength and show there is a topological phase transition from a photonic semimetal to a photonic Wannier-type SOTI, characterized by nontrivially quantized Wannier center [43,51]. In Sec.…”
Section: Introductionmentioning
confidence: 99%