Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard X-ray photoelectron spectroscopy

Strigari, F.; Sundermann, Martin; Muro, Yuji; Yutani, K.; Takabatake, Toshiro; Tsuei, Ku Ding; Liao, Yen Fa; Tanaka, A.; Thalmeier, Peter; Haverkort, M. W.; Tjeng, L. H.; Severing, A.

doi:10.1016/j.elspec.2015.01.004

Cited by 17 publications

(21 citation statements)

References 67 publications

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“…This is an approximation since it neglects hybridization effects in the final states 39 . As in core level photoemission 40 , I ( f 2 ) overestimates and I ( f 0 ) underestimates so that the above values for n f and should be taken as upper and lower limits, respectively. It is therefore safe to conclude that the cf -hybridization is very strong in CeRu 4 Sn 6 .…”

Section: Resultsmentioning

confidence: 99%

CeRu4Sn6: a strongly correlated material with nontrivial topology

Sundermann

Strigari

Willers

et al. 2015

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Topological insulators form a novel state of matter that provides new opportunities to create unique quantum phenomena. While the materials used so far are based on semiconductors, recent theoretical studies predict that also strongly correlated systems can show non-trivial topological properties, thereby allowing even the emergence of surface phenomena that are not possible with topological band insulators. From a practical point of view, it is also expected that strong correlations will reduce the disturbing impact of defects or impurities, and at the same increase the Fermi velocities of the topological surface states. The challenge is now to discover such correlated materials. Here, using advanced x-ray spectroscopies in combination with band structure calculations, we infer that CeRu4Sn6 is a strongly correlated material with non-trivial topology.

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Section: Resultsmentioning

confidence: 99%

CeRu4Sn6: a strongly correlated material with nontrivial topology

Sundermann

Strigari

Willers

et al. 2015

Sci Rep

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“…This rotation appears at x ∼ 0.07 in Ce 1−x La x Ru 2 Al 10 . In Ce 0.9 La 0.1 Ru 2 Al 10 , the AFM order with m AF b is realized at the ambient pressure but m AF is easily rotated from b to c axis by a small magnitude of pressure.…”

Section: Introductionmentioning

confidence: 90%

“…(2) CeRu 2 Al 10 is located at the boundary between the localized and itinerant regime, from the rapid increase of T 0 by a small pressure and the change into the intermediate valence regime with a larger pressure [3,[6][7][8][9][10][11][12][13][14]. (3) A spin-singlet-like characteristic is seen in χ a and the magnetization curve for H a.…”

Section: Introductionmentioning

confidence: 97%

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Pr- and La-doping effects on the magnetic anisotropy in the antiferromagnetic phase of Kondo semiconductorCeRu2Al10

et al. 2015

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We have studied the Pr-and La-doping effects on the magnetic anisotropy in the antiferro-magnetic (AFM) phase of CeRu 2 Al 10 . The crystalline electric field (CEF) splitting in PrRu 2 Al 10 was found to be as large as ∼800 K with a singlet ground state. In Ce 1−x Pr x Ru 2 Al 10 , the CEF level scheme of the Pr ion is not changed with x. The AFM moment (m AF ) is rotated from c to b axis in both systems at x sr c ∼ 0.03 and ∼0.07 for Ln=Pr and La, respectively. As the ionic radius of La and Pr is larger and smaller than that of Ce, respectively, these results indicate that the chemical pressure effect is not associated with the rotation of m AF , but is caused by the suppression of the c-f hybridization originating from the decrease of 4f electrons of Ce ions by Ce-site substitution. Since a small amount of Pr or La doping changes easily the magnetization easy axis of all the moments on Ce sites, the origin of the magnetic anisotropy is not the local single ion effect but the bandlike effect through the anisotropic c-f hybridization. The magnetic phase diagrams of Ce 1−x Ln x Ru 2 Al 10 indicate that above x sr c , the AFM order with m AF b continues to exist up to x c , which is ∼0.4 and ∼0.6 in Ln=Pr and Ln=La, respectively. This indicates that even in the sample with an AFM transition temperature (T 0 ) near x c , the anisotropic c-f hybridization dominates the AFM order. A large positive transverse magnetoresistance is seen below T 0 , but a very small one above T 0 . Together with the results of Hall resistivity and the observation of Shubnikov-de Haas oscillation, we propose that there exist large Fermi surfaces above T 0 and small ones below T 0 . A gap is opened by the AFM order on almost the area of the large Fermi surface, and small Fermi surfaces are constructed below T 0 , although we do not know the mechanism, which might be specific to the AFM order in Kondo semiconductors. The largest suppression of the magnetic scattering below T 0 is observed for the current I a and the smallest one for I b. This anisotropy may be associated with the anisotropic c-f hybridization, which may contribute to the anisotropic magnetic scattering of the conduction electron below T 0 .

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“…For details on the setup, data treatment, and analysis see the Supplemental Material (SM) [23] and also Refs. [30][31][32]. Figure 1 displays the Ce3d core-level emission spectrum of CeIrSn (blue line).…”

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confidence: 99%

Antiferromagnetic Correlations in Strongly Valence Fluctuating CeIrSn

et al. 2021

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CeIrSn with a quasikagome Ce lattice in the hexagonal basal plane is a strongly valence fluctuating compound, as we confirm by hard x-ray photoelectron spectroscopy and inelastic neutron scattering, with a high Kondo temperature of T K ∼ 480 K. We report a negative in-plane thermal expansion α=T below 2 K, which passes through a broad minimum near 0.75 K. Volume and a-axis magnetostriction for Bka are markedly negative at low fields and change sign before a sharp metamagnetic anomaly at 6 T. These behaviors are unexpected for Ce-based intermediate valence systems, which should feature positive expansivity. Rather they point towards antiferromagnetic correlations at very low temperatures. This is supported by muon spin relaxation measurements down to 0.1 K, which provide microscopic evidence for a broad distribution of internal magnetic fields. Comparison with isostructural CeRhSn suggests that these antiferromagnetic correlations emerging at T ≪ T K result from geometrical frustration.

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Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard X-ray photoelectron spectroscopy

Cited by 17 publications

References 67 publications

CeRu4Sn6: a strongly correlated material with nontrivial topology

CeRu4Sn6: a strongly correlated material with nontrivial topology

Pr- and La-doping effects on the magnetic anisotropy in the antiferromagnetic phase of Kondo semiconductorCeRu2Al10

Antiferromagnetic Correlations in Strongly Valence Fluctuating CeIrSn

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