Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffraction

Takahasi, Masamitu; Мizuki, J.

doi:10.1016/j.jcrysgro.2006.11.088

Cited by 3 publications

(1 citation statement)

References 38 publications

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“…In addition to thin-film structures, the growth of nanostructures having finite size, such as quantum dots (QDs) 1,2) and nanowires (NWs), 3,4) has been intensively studied in expectation of novel device functions enabled by the confinement of carriers. For decades, X-ray diffraction (XRD) has played critical roles in the characterization of nonperiodic samples relevant to crystal growth, such as the structures of the substrate surface as the growth front, [5][6][7][8][9] strains and defects at heteroepitaxial interfaces, 10,11) NWs, [12][13][14][15][16][17] and QDs. [18][19][20][21][22][23][24][25][26][27][28][29] Since the diffuse X-ray scattering originating from nonperiodicity is much weaker than the Bragg diffraction from well-ordered crystals, its in situ measurement used to be difficult with a laboratory X-ray source.…”

Section: Introductionmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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Section: Introductionmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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Photoemission from α and β phases of the GaAs(001)-c(4×4) surface

et al. 2009

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GaAs Surface under Molecular-Beam Epitaxial Growth Conditions

正光

2012

Journal of The Surface Science Society of Japan

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Surface sturctures of GaAs(001) under growth conditions have been investigated using in situ X-ray diffraction. The atomic arrangements of GaAs(001) surface stabilized at an elevated temperature under As pressure were quantitatively determined in a molecular-beam epitaxy chamber integrated with an X-ray diffractometer. With the help of high angular resolution of synchrotron radiation, disordered sructures appearing in the transition from (2×4) to other phases were clarified. Energy tunability of synchrotron X-rays allowed for element-sepcific analysis of the c (4×4) struture, providing direct evidence for Ga-As heterodimer formation.

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Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffraction

Cited by 3 publications

References 38 publications

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Photoemission from α and β phases of the GaAs(001)-c(4×4) surface

GaAs Surface under Molecular-Beam Epitaxial Growth Conditions

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